Unknown

Dataset Information

0

Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.


ABSTRACT: Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

SUBMITTER: Zhang K 

PROVIDER: S-EPMC4585683 | biostudies-other | 2015

REPOSITORIES: biostudies-other

Similar Datasets

| S-EPMC4643355 | biostudies-literature
| S-EPMC6196486 | biostudies-literature
| S-EPMC4498448 | biostudies-literature
| S-EPMC5553093 | biostudies-literature
| S-EPMC2934897 | biostudies-literature
| S-EPMC4819025 | biostudies-literature
| S-EPMC8614108 | biostudies-literature
| S-EPMC5956982 | biostudies-literature
| S-EPMC5913139 | biostudies-literature
| S-EPMC4595716 | biostudies-literature