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Semiconductor Epitaxy in Superconducting Templates.

ABSTRACT: Integration of high-quality semiconductor-superconductor devices into scalable and complementary metal-oxide-semiconductor compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.

SUBMITTER: Ritter MF

PROVIDER: S-EPMC8662718 | biostudies-literature | 2021 Dec

REPOSITORIES: biostudies-literature

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Semiconductor Epitaxy in Superconducting Templates.

Ritter Markus F MF Schmid Heinz H Sousa Marilyne M Staudinger Philipp P Haxell Daniel Z DZ Mueed M A MA Madon Benjamin B Pushp Aakash A Riel Heike H Nichele Fabrizio F

Nano letters 20211118 23

Integration of high-quality semiconductor-superconductor devices into scalable and complementary metal-oxide-semiconductor compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alig ...[more]

PMID: 34788993

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