Unknown

Dataset Information

0

Ionic-Liquid Gating in Two-Dimensional TMDs: The Operation Principles and Spectroscopic Capabilities.


ABSTRACT: Ionic-liquid gating (ILG) is able to enhance carrier densities well above the achievable values in traditional field-effect transistors (FETs), revealing it to be a promising technique for exploring the electronic phases of materials in extreme doping regimes. Due to their chemical stability, transition metal dichalcogenides (TMDs) are ideal candidates to produce ionic-liquid-gated FETs. Furthermore, as recently discovered, ILG can be used to obtain the band gap of two-dimensional semiconductors directly from the simple transfer characteristics. In this work, we present an overview of the operation principles of ionic liquid gating in TMD-based transistors, establishing the importance of the reference voltage to obtain hysteresis-free transfer characteristics, and hence, precisely determine the band gap. We produced ILG-based bilayer WSe2 FETs and demonstrated their ambipolar behavior. We estimated the band gap directly from the transfer characteristics, demonstrating the potential of ILG as a spectroscopy technique.

SUBMITTER: Vaquero D 

PROVIDER: S-EPMC8704478 | biostudies-literature |

REPOSITORIES: biostudies-literature

Similar Datasets

| S-EPMC6076294 | biostudies-literature
| S-EPMC5006154 | biostudies-literature
| S-EPMC6269710 | biostudies-literature
| S-EPMC4745055 | biostudies-other
| S-EPMC3205947 | biostudies-literature
| S-EPMC5612984 | biostudies-literature
| S-EPMC8400791 | biostudies-literature
| S-EPMC7404116 | biostudies-literature
| S-EPMC8767539 | biostudies-literature
| S-EPMC8654070 | biostudies-literature