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Ultra-fast data sanitization of SRAM by back-biasing to resist a cold boot attack.


ABSTRACT: Although SRAM is a well-established type of volatile memory, data remanence has been observed at low temperature even for a power-off state, and thus it is vulnerable to a physical cold boot attack. To address this, an ultra-fast data sanitization method within 5 ns is demonstrated with physics-based simulations for avoidance of the cold boot attack to SRAM. Back-bias, which can control device parameters of CMOS, such as threshold voltage and leakage current, was utilized for the ultra-fast data sanitization. It is applicable to temporary erasing with data recoverability against a low-level attack as well as permanent erasing with data irrecoverability against a high-level attack.

SUBMITTER: Han SJ 

PROVIDER: S-EPMC8742074 | biostudies-literature |

REPOSITORIES: biostudies-literature

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