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Sensor behavior of MoS₂ field-effect transistor with light injection toward chemical recognition.

ABSTRACT: The application of field-effect transistor (FET) devices with atomically thin channels as sensors has attracted significant attention, where the adsorption of atoms/molecules on the channels can be detected by the change in the properties of FET. Thus, to further enhance the chemical sensitivity of FETs, we developed a method to distinguish the chemical properties of adsorbates from the electric behavior of FET devices. Herein, we explored the variation in the FET properties of an MoS₂-FET upon visible light injection and the effect of molecule adsorption for chemical recognition. By injecting light, the drain current (I _d) increased from the light-off state, which is defined as (ΔI _d)_ph. We examined this effect using CuPc molecules deposited on the channel. The (ΔI _d)_ph vs. wavelength continuous spectrum in the visible region showed a peak at the energy for the excitation from the highest occupied orbital (HOMO) to the molecule-induced state (MIS). The energy position and the intensity of this feature showed a sensitive variation with the adsorption of the CuPc molecule and are in good agreement with previously reported photo-absorption spectroscopy data, indicating that this technique can be employed for chemical recognition.

SUBMITTER: Alam MI

PROVIDER: S-EPMC9037302 | biostudies-literature | 2021 Aug

REPOSITORIES: biostudies-literature

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Sensor behavior of MoS<sub>2</sub> field-effect transistor with light injection toward chemical recognition.

Alam Md Iftekharul MI Takaoka Tsuyoshi T Waizumi Hiroki H Tanaka Yudai Y Al Mamun Muhammad Shamim MS Ando Atsushi A Komeda Tadahiro T

RSC advances 20210803 43

The application of field-effect transistor (FET) devices with atomically thin channels as sensors has attracted significant attention, where the adsorption of atoms/molecules on the channels can be detected by the change in the properties of FET. Thus, to further enhance the chemical sensitivity of FETs, we developed a method to distinguish the chemical properties of adsorbates from the electric behavior of FET devices. Herein, we explored the variation in the FET properties of an MoS<sub>2</sub ...[more]

PMID: 35479991

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Project description:We report a precise measurement of the sensor behavior of the field effect transistor (FET) formed with the MoS2 channel when the channel part is exposed to Cl2 gas. The gas exposure and the electrical measurement of the MoS2 FET were executed with in situ ultrahigh-vacuum (UHV) conditions in which the surface analysis techniques were equipped. This makes it possible to detect how much sensitivity the MoS2 FET can provide and understand the surface properties. With the Cl2 gas exposure to the channel, the plot of the drain current versus the gate voltage (I d-V g curve) shifts monotonically toward the positive direction of V g, suggesting that the adsorbate acts as an electron acceptor. The I d-V g shifts are numerically estimated by measuring the onset of I d (threshold voltage, V th) and the mobility as a function of the dosing amounts of the Cl2 gas. The behaviors of both the V th shift and the mobility with the Cl2 dosing amount can be fitted with the Langmuir adsorption kinetics, which is typically seen in the uptake curve of molecule adsorption onto well-defined surfaces. This can be accounted for by a model where an impinging molecule occupies an empty site with a certain probability, and each adsorbate receives a certain amount of negative charge from the MoS2 surface up to the monolayer coverage. The charge transfer makes the V th shifts. In addition, the mobility is reduced by the enhancement of the Coulomb scattering for the electron flow in the MoS2 channel by the accumulated charge. From the thermal desorption spectroscopy (TDS) measurement and density functional theory (DFT) calculations, we concluded that the adsorbate that is responsible for the change of the FET property is the Cl atom that is dissociated from the Cl2 molecule. The monotonic shift of V th with the coverage suggests that the MoS2 device sensor has a good sensitivity to detect 10-3 monolayers (ML) of adsorption corresponding to the ppb level sensor with an activation time of 1 s.

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Sensor behavior of MoS₂ field-effect transistor with light injection toward chemical recognition.

Publications

Sensor behavior of MoS<sub>2</sub> field-effect transistor with light injection toward chemical recognition.

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Sensor behavior of MoS2 field-effect transistor with light injection toward chemical recognition.

Publications

Sensor behavior of MoS<sub>2</sub> field-effect transistor with light injection toward chemical recognition.

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OmicsDI is part of the ELIXIR infrastructure

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Sensor behavior of MoS₂ field-effect transistor with light injection toward chemical recognition.