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Modified vapor phase deposition technology for high-performance uncooled MIR PbSe detectors.

ABSTRACT: The low performance of middle infrared (MIR) PbSe detectors fabricated from vapor phase deposition (VPD) technology restricts the rapid development of VPD technology and detector commercialization. A modified VPD process was proposed to duplicate the microstructural features of high-performance CBD-PbSe detectors for a breakthrough in the VPD technology. A peak detectivity D* of 1.6 × 10¹⁰ cm Hz^1/2 W^-1 at 298 K was achieved under the optimized sensitization, approaching the best performance of CBD-PbSe detectors. Through the contrasting various microstructures obtained from diverse methods, the nanoparticle self-assembly structure in VPD-PbSe oriented rod-like crystals is an important factor for the IR sensitivity. The microstructural evolution demonstrated that there is a large space to grow for VPD-PbSe detectivity D* via eliminating the voids formed in the iodine-sensitization process. The increased performance indicates that the modified VPD technology can provide technical support for the manufacturing of the megapixel uncooled lead-salt FPA imager and accelerate its industrialization.

SUBMITTER: Qiu J

PROVIDER: S-EPMC9042917 | biostudies-literature |

REPOSITORIES: biostudies-literature

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Data for direct chemical deposition of PbS on chemical vapor deposition grown-graphene for high performance photovoltaic infrared photo-detectors.

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