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Solution-processable and photopolymerisable TiO₂ nanorods as dielectric layers for thin film transistors.

ABSTRACT: We report the fabrication of a solution-processed n-type Thin Film Transistor (TFT) with current on/off ratios of 10⁴, a turn-on voltage (V _ON) of 1.2 V and a threshold voltage (V _T) of 6.2 V. The TFT incorporates an insoluble and intractable dielectric layer (k = 7-9) prepared in situ from solution-processed and then photopolymerised ligand-stabilised, inorganic/organic TiO₂ nanorods. A solution processed zinc oxide (ZnO) layer acts as the semiconductor. The new surface-modified TiO₂ nanorods were synthesised using a ligand replacement process with a monolayer coating of photopolymerisable 10-undecynylphosphonic acid (10UCYPA) to render them both soluble in common organic solvents and be photopolymerisable using UV-illumination after having been deposited on substrate surfaces from solution and drying.

SUBMITTER: Cheng F

PROVIDER: S-EPMC9055251 | biostudies-literature | 2020 Jul

REPOSITORIES: biostudies-literature

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Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors.

Cheng Fei F Verrelli Emanuele E Alharthi Fahad A FA Das Satyajit S Anthopoulos Thomas D TD Lai Khue T KT Kemp Neil T NT O'Neill Mary M Kelly Stephen M SM

RSC advances 20200706 43

We report the fabrication of a solution-processed n-type Thin Film Transistor (TFT) with current on/off ratios of 104, a turn-on voltage (V ON) of 1.2 V and a threshold voltage (V T) of 6.2 V. The TFT incorporates an insoluble and intractable dielectric layer (k = 7-9) prepared in situ from solution-processed and then photopolymerised ligand-stabilised, inorganic/organic TiO2 nanorods. A solution processed zinc oxide (ZnO) l ...[more]

PMID: 35518573

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