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N-Type conducting P doped ZnO thin films via chemical vapor deposition.

ABSTRACT: Extrinsically doped ZnO thin films are of interest due to their high electrical conductivity and transparency to visible light. In this study, P doped ZnO thin films were grown on glass substrates via aerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in the V+ oxidation state and is able to reduce resistivity to 6.0 × 10^-3 Ω cm while maintaining visible light transmittance at ∼75%. The thins films were characterized by X-ray diffraction studies that showed only Bragg peaks for the wurtzite ZnO phase. Fitting of the diffraction data to a Le Bail model also showed a general expansion of the ZnO unit cell upon doping due to the substitution of Zn²⁺ ions with the larger P⁵⁺.

SUBMITTER: Zhao D

PROVIDER: S-EPMC9056824 | biostudies-literature | 2020 Sep

REPOSITORIES: biostudies-literature

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n-Type conducting P doped ZnO thin films via chemical vapor deposition.

Zhao Donglei D Li Jianwei J Sathasivam Sanjayan S Carmalt Claire J CJ

RSC advances 20200917 57

Extrinsically doped ZnO thin films are of interest due to their high electrical conductivity and transparency to visible light. In this study, P doped ZnO thin films were grown on glass substrates via aerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in the V+ oxidation state and is able to reduce resistivity to 6.0 × 10-3 Ω cm while maintaining visible light transmittance at ∼75%. The thins films were characterized by X-ray dif ...[more]

PMID: 35514390

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