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Na-Ga-Si type-I clathrate single crystals grown via Na evaporation using Na-Ga and Na-Ga-Sn fluxes.


ABSTRACT: Single crystals of a Na-Ga-Si clathrate, Na8Ga5.70Si40.30, of size 2.9 mm were grown via the evaporation of Na from a Na-Ga-Si melt with the molar ratio of Na : Ga : Si = 4 : 1 : 2 at 773 K for 21 h under an Ar atmosphere. The crystal structure was analyzed using X-ray diffraction with the model of the type-I clathrate (cubic, a = 10.3266(2) Å, space group Pmn, no. 223). By adding Sn to a Na-Ga-Si melt (Na : Ga : Si : Sn = 6 : 1 : 2 : 1), single crystals of Na8Ga x Si46-x (x = 4.94-5.52, a = 10.3020(2)-10.3210(3) Å), with the maximum size of 3.7 mm, were obtained via Na evaporation at 723-873 K. The electrical resistivities of Na8Ga5.70Si40.30 and Na8Ga4.94Si41.06 were 1.40 and 0.72 mΩ cm, respectively, at 300 K, and metallic temperature dependences of the resistivities were observed. In the Si L2,3 soft X-ray emission spectrum of Na8Ga5.70Si40.30, a weak peak originating from the lowest conduction band in the undoped Si46 was observed at an emission energy of 98 eV.

SUBMITTER: Urushiyama H 

PROVIDER: S-EPMC9091382 | biostudies-literature | 2018 Dec

REPOSITORIES: biostudies-literature

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Na-Ga-Si type-I clathrate single crystals grown <i>via</i> Na evaporation using Na-Ga and Na-Ga-Sn fluxes.

Urushiyama Hironao H   Morito Haruhiko H   Yamane Hisanori H   Terauchi Masami M  

RSC advances 20181204 71


Single crystals of a Na-Ga-Si clathrate, Na<sub>8</sub>Ga<sub>5.70</sub>Si<sub>40.30</sub>, of size 2.9 mm were grown <i>via</i> the evaporation of Na from a Na-Ga-Si melt with the molar ratio of Na : Ga : Si = 4 : 1 : 2 at 773 K for 21 h under an Ar atmosphere. The crystal structure was analyzed using X-ray diffraction with the model of the type-I clathrate (cubic, <i>a</i> = 10.3266(2) Å, space group <i>Pm</i>3̄<i>n</i>, no. 223). By adding Sn to a Na-Ga-Si melt (Na : Ga : Si : Sn = 6 : 1 : 2   ...[more]

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