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Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces.

ABSTRACT: Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale mechanisms for remote epitaxy remain unclear. Here we experimentally demonstrate that GaSb films grow on graphene-terminated GaSb (001) via a seeded lateral epitaxy mechanism, in which pinhole defects in the graphene serve as selective nucleation sites, followed by lateral epitaxy and coalescence into a continuous film. Remote interactions are not necessary in order to explain the growth. Importantly, the small size of the pinholes permits exfoliation of continuous, free-standing GaSb membranes. Due to the chemical similarity between GaSb and other III-V materials, we anticipate this mechanism to apply more generally to other materials. By combining molecular beam epitaxy with in-situ electron diffraction and photoemission, plus ex-situ atomic force microscopy and Raman spectroscopy, we track the graphene defect generation and GaSb growth evolution a few monolayers at a time. Our results show that the controlled introduction of nanoscale openings in graphene provides an alternative route towards tuning the growth and properties of 3D epitaxial films and membranes on 2D material masks.

SUBMITTER: Manzo S

PROVIDER: S-EPMC9293962 | biostudies-literature |

REPOSITORIES: biostudies-literature

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The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation.

Project description:A challenging approach, but one providing a key solution to material growth, remote epitaxy (RE)-a novel concept related to van der Waals epitaxy (vdWE)-requires the stability of a two-dimensional (2-D) material. However, when graphene, a representative 2-D material, is present on substrates that have a nitrogen atom, graphene loss occurs. Although this phenomenon has remained a hurdle for over a decade, restricting the advantages of applying graphene in the growth of III-nitride materials, few previous studies have been conducted. Here, we report the stability of graphene on substrates containing oxygen or nitrogen atoms. Graphene has been observed on highly decomposed Al2O3; however, graphene loss occurred on decomposed AlN at temperatures over 1300 °C. To overcome graphene loss, we investigated 2-D hexagonal boron nitride (h-BN) as an alternative. Unlike graphene on AlN, it was confirmed that h-BN on AlN was intact after the same high-temperature process. Moreover, the overgrown AlN layers on both h-BN/AlN and h-BN/Al2O3 could be successfully exfoliated, which indicates that 2-D h-BN survived after AlN growth and underlines its availability for the vdWE/RE of III-nitrides with further mechanical transfer. By enhancing the stability of the 2-D material on the substrate, our study provides insights into the realization of a novel epitaxy concept.

| S-EPMC8188504 | biostudies-literature

Controlling pore structure and conductivity in graphene nanosheet films through partial thermal exfoliation.

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Epitaxy, exfoliation, and strain-induced magnetism in rippled Heusler membranes.

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Ultrasound exfoliation of inorganic analogues of graphene.

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Millstone Exfoliation: a True Shear Exfoliation for Large-Size Few-Layer Graphene Oxide.

Project description:A millstone (MS) was introduced in the production of large-size few-layer-graphene oxide (FLGO) via true shear exfoliation in order to minimize fragmentation. The MS was constructed with two glass plates, where the top plate was designed to rotate against the stationary bottom plate, thereby generating true shear force. Mildly oxidized graphite (MOG) was used for MS exfoliation in order to obtain both good property and high yield. The rpm of rotation (10, 20, 30, 40, and 50), solution concentration (0.5, 1, and 2 mg/ml), and number of exfoliation (1, 2, and 3) were optimized by measuring the UV-vis absorption, and the effect of oxidation time (30, 60, and 90 min) was studied under the given optimum conditions. Next, the FLGO was isolated by centrifugation and characterized by TEM and AFM. The FLGO obtained was as large as ~ 10 μm in size, which was slightly smaller than the pristine graphite, suggesting a possibility of slight fragmentation. But it was still much larger than the FLGO obtained via sonication (< 1 μm), demonstrating successful MS exfoliation.

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| S-EPMC7608796 | biostudies-literature

Interlayer epitaxy of wafer-scale high-quality uniform AB-stacked bilayer graphene films on liquid Pt<sub>3</sub>Si/solid Pt.

Project description:Large-area high-quality AB-stacked bilayer graphene films are highly desired for the applications in electronics, photonics and spintronics. However, the existing growth methods can only produce discontinuous bilayer graphene with variable stacking orders because of the non-uniform surface and strong potential field of the solid substrates used. Here we report the growth of wafer-scale continuous uniform AB-stacked bilayer graphene films on a liquid Pt3Si/solid Pt substrate by chemical vapor deposition. The films show quality, mechanical and electrical properties comparable to the mechanically exfoliated samples. Growth mechanism studies show that the second layer is grown underneath the first layer by precipitation of carbon atoms from the solid Pt, and the small energy requirements for the movements of graphene nucleus on the liquid Pt3Si enables the interlayer epitaxy to form energy-favorable AB stacking. This interlayer epitaxy also allows the growth of ABA-stacked trilayer graphene and is applicable to other liquid/solid substrates.

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