Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Demonstration of Anti-ambipolar Switch and Its Applications for Extremely Low Power Ternary Logic Circuits.

ABSTRACT: Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a very high peak-to-valley ratio (∼10⁶) and adjustable operating range characteristics was successfully demonstrated using a ZnO and dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene heterojunction structure. The entire device integration was completed at a low thermal budget of less than 200 °C, which makes this AAS device compatible with monolithic 3D integration. A 1-trit ternary full adder designed with this AAS device exhibits excellent power-delay product performance (∼122 aJ) with extremely low power (∼0.15 μW, 7 times lower than the reference circuit) and lower device count than those of other ternary device candidates.

SUBMITTER: Lee Y

PROVIDER: S-EPMC9331138 | biostudies-literature | 2022 Jul

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Demonstration of Anti-ambipolar Switch and Its Applications for Extremely Low Power Ternary Logic Circuits.

Lee Yongsu Y Kim Sunmean S Lee Ho-In HI Kim Seung-Mo SM Kim So-Young SY Kim Kiyung K Kwon Heejin H Lee Hae-Won HW Hwang Hyeon Jun HJ Kang Seokhyeong S Lee Byoung Hun BH

ACS nano 20220628 7

Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a very high peak-to-valley ratio (∼106) and adjustable operating range characteristics was successfully demonstrated using a ZnO and dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene heterojunction structure. The entire device integration was completed at a low thermal budget of less than ...[more]

PMID: 35763431

Similar Datasets

Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors.

Project description:Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is crucial for proper circuit operation. Novel gating techniques enable to control the transistor polarity but result in dramatically reduced performances. Here we show high-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors. Electrically reconfigurable complementary logic gates based on ambipolar organic transistors are experimentally demonstrated, thus opening up new opportunities for ambipolar organic complementary electronics.

| S-EPMC5071863 | biostudies-literature

Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning process.

Project description:A p-type ternary logic device with a stack-channel structure is demonstrated using an organic p-type semiconductor, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). A photolithography-based patterning process is developed to fabricate scaled electronic devices with complex organic semiconductor channel structures. Two layers of thin DNTT with a separation layer are fabricated via the low-temperature deposition process, and for the first time, p-type ternary logic switching characteristics exhibiting zero differential conductance in the intermediate current state are demonstrated. The stability of the DNTT stack-channel ternary logic switch device is confirmed by implementing a resistive-load ternary logic inverter circuit.

| S-EPMC9998751 | biostudies-literature

DNA Strand-Displacement Temporal Logic Circuits.

Project description:Molecular circuits capable of processing temporal information are essential for complex decision making in response to both the presence and history of a molecular environment. A particular type of temporal information that has been recognized to be important is the relative timing of signals. Here we demonstrate the strategy of temporal memory combined with logic computation in DNA strand-displacement circuits capable of making decisions based on specific combinations of inputs as well as their relative timing. The circuit encodes the timing information on inputs in a set of memory strands, which allows for the construction of logic gates that act on current and historical signals. We show that mismatches can be employed to reduce the complexity of circuit design and that shortening specific toeholds can be useful for improving the robustness of circuit behavior. We also show that a detailed model can provide critical insights for guiding certain aspects of experimental investigations that an abstract model cannot. We envision that the design principles explored in this study can be generalized to more complex temporal logic circuits and incorporated into other types of circuit architectures, including DNA-based neural networks, enabling the implementation of timing-dependent learning rules and opening up new opportunities for embedding intelligent behaviors into artificial molecular machines.

| S-EPMC9284558 | biostudies-literature

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

Project description:Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21?cm(2) V(-1) sec(-1), and threshold voltages of nearly 0?V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75?Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

| S-EPMC4860580 | biostudies-literature

Demonstration of Complementary Ternary Graphene Field-Effect Transistors.

Project description:Strong demand for power reduction in state-of-the-art semiconductor devices calls for novel devices and architectures. Since ternary logic architecture can perform the same function as binary logic architecture with a much lower device density and higher information density, a switch device suitable for the ternary logic has been pursued for several decades. However, a single device that satisfies all the requirements for ternary logic architecture has not been demonstrated. We demonstrated a ternary graphene field-effect transistor (TGFET), showing three discrete current states in one device. The ternary function was achieved by introducing a metal strip to the middle of graphene channel, which created an N-P-N or P-N-P doping pattern depending on the work function of the metal. In addition, a standard ternary inverter working at room temperature has been achieved by modulating the work function of the metal in a graphene channel. The feasibility of a ternary inverter indicates that a general ternary logic architecture can be realized using complementary TGFETs. This breakthrough will provide a key stepping-stone for an extreme-low-power computing technology.

| S-EPMC5172371 | biostudies-literature

Integrated logic circuits using single-atom transistors.

Project description:Scaling down the size of computing circuits is about to reach the limitations imposed by the discrete atomic structure of matter. Reducing the power requirements and thereby dissipation of integrated circuits is also essential. New paradigms are needed to sustain the rate of progress that society has become used to. Single-atom transistors, SATs, cascaded in a circuit are proposed as a promising route that is compatible with existing technology. We demonstrate the use of quantum degrees of freedom to perform logic operations in a complementary-metal-oxide-semiconductor device. Each SAT performs multilevel logic by electrically addressing the electronic states of a dopant atom. A single electron transistor decodes the physical multivalued output into the conventional binary output. A robust scalable circuit of two concatenated full adders is reported, where by utilizing charge and quantum degrees of freedom, the functionality of the transistor is pushed far beyond that of a simple switch.

| S-EPMC3161576 | biostudies-literature

Mechanically Flexible and High-Performance CMOS Logic Circuits.

Project description:Low-power flexible logic circuits are key components required by the next generation of flexible electronic devices. For stable device operation, such components require a high degree of mechanical flexibility and reliability. Here, the mechanical properties of low-power flexible complementary metal-oxide-semiconductor (CMOS) logic circuits including inverter, NAND, and NOR are investigated. To fabricate CMOS circuits on flexible polyimide substrates, carbon nanotube (CNT) network films are used for p-type transistors, whereas amorphous InGaZnO films are used for the n-type transistors. The power consumption and voltage gain of CMOS inverters are <500 pW/mm at Vin = 0 V (<7.5 nW/mm at Vin = 5 V) and >45, respectively. Importantly, bending of the substrate is not found to cause significant changes in the device characteristics. This is also observed to be the case for more complex flexible NAND and NOR logic circuits for bending states with a curvature radius of 2.6 mm. The mechanical stability of these CMOS logic circuits makes them ideal candidates for use in flexible integrated devices.

| S-EPMC4602193 | biostudies-literature

Constructing Controllable Logic Circuits Based on DNAzyme Activity.

Project description:Recently, DNA molecules have been widely used to construct advanced logic devices due to their unique properties, such as a simple structure and predictable behavior. In fact, there are still many challenges in the process of building logic circuits. Among them, the scalability of the logic circuit and the elimination of the crosstalk of the cascade circuit have become the focus of research. Inspired by biological allosteric regulation, we developed a controllable molecular logic circuit strategy based on the activity of DNAzyme. The E6 DNAzyme sequence was temporarily blocked by hairpin DNA and activated under appropriate input trigger conditions. Using a substrate with ribonucleobase (rA) modification as the detection strand, a series of binary basic logic gates (YES, AND, and INHIBIT) were implemented on the computational component platform. At the same time, we demonstrate a parallel demultiplexer and two multi-level cascade circuits (YES-YES and YES-Three input AND (YES-TAND)). In addition, the leakage of the cascade process was reduced by exploring factors such as concentration and DNA structure. The proposed DNAzyme activity regulation strategy provides great potential for the expansion of logic circuits in the future.

| S-EPMC6891523 | biostudies-literature

Entropy-driven DNA logic circuits regulated by DNAzyme.

Project description:The catalytic DNA circuits play a critical role in engineered biological systems and molecular information processing. Actually, some of the natural or synthetic DNA circuits were triggered by covalent modifications, where conformational changes were induced to facilitate complex DNA engineering functions and signal transmissions. However, most of the reported artificial catalytic DNA circuits were regulated by the toehold-mediated reaction. Therefore, it is significant to propose a strategy to regulate the catalytic DNA circuit not only by the toehold-mediated mechanism, but also by involving the conformational changes induced by the covalent modification. In this study, we developed the catalytic DNA logic circuits regulated by DNAzyme. Here, a regulation strategy based on the covalent modification was proposed to control the DNA circuit, combing two reaction mechanisms: DNAzyme digestion and entropy-driven strand displacement. The DNAzyme and DNA catalyst can participate into the reactions alternatively, thus realizing the cascading catalytic circuits. Using the DNAzyme regulation, a series of logic gates (YES, OR and AND) were constructed. In addition, a two-layer cascading circuit and a feedback self-catalysis circuit were also established. The proposed DNAzyme-regulated strategy shows great potentials as a reliable and feasible method for constructing more complex catalytic DNA circuits.

| S-EPMC6144864 | biostudies-literature

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications.

Project description:Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. However, to make the most of their advantages, it is crucial to understand the intrinsic differences between WBG- and Si-based switching devices and investigate effective means to safely, efficiently, and reliably utilize the WBG devices. This paper aims to provide engineers in the power engineering field a comprehensive understanding of WBG switching devices' driving requirements, especially for mid- to high-power applications. First, the characteristics and operating principles of WBG switching devices and their commercial products within specific voltage ranges are explored. Next, considerations regarding the design of driving circuits for WBG switching devices are addressed, and commercial drivers designed for WBG switching devices are explored. Lastly, a review on typical papers concerning driving technologies for WBG switching devices in mid- to high-power applications is presented.

| S-EPMC7826992 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data