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Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning process.


ABSTRACT: A p-type ternary logic device with a stack-channel structure is demonstrated using an organic p-type semiconductor, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). A photolithography-based patterning process is developed to fabricate scaled electronic devices with complex organic semiconductor channel structures. Two layers of thin DNTT with a separation layer are fabricated via the low-temperature deposition process, and for the first time, p-type ternary logic switching characteristics exhibiting zero differential conductance in the intermediate current state are demonstrated. The stability of the DNTT stack-channel ternary logic switch device is confirmed by implementing a resistive-load ternary logic inverter circuit.

SUBMITTER: Lee Y 

PROVIDER: S-EPMC9998751 | biostudies-literature | 2023 Mar

REPOSITORIES: biostudies-literature

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Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning process.

Lee Yongsu Y   Kwon Heejin H   Kim Seung-Mo SM   Lee Ho-In HI   Kim Kiyung K   Lee Hae-Won HW   Kim So-Young SY   Hwang Hyeon Jun HJ   Lee Byoung Hun BH  

Nano convergence 20230309 1


A p-type ternary logic device with a stack-channel structure is demonstrated using an organic p-type semiconductor, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). A photolithography-based patterning process is developed to fabricate scaled electronic devices with complex organic semiconductor channel structures. Two layers of thin DNTT with a separation layer are fabricated via the low-temperature deposition process, and for the first time, p-type ternary logic switching characteristics  ...[more]

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