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Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors.

ABSTRACT: Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support the experimental activities and to provide them with useful guidelines becomes essential. In this context, we propose a theoretical approach that combines numerical simulations and small-signal modeling to analyze 2DM-based FETs for radio-frequency applications. This multi-scale scheme takes into account non-idealities, such as interface traps, carrier velocity saturation, or short channel effects, by means of self-consistent physics-based numerical calculations that later feed the circuit level via a small-signal model based on the dynamic intrinsic capacitances of the device. At the circuit stage, the possibilities range from the evaluation of the performance of a single device to the design of complex circuits combining multiple transistors. In this work, we validate our scheme against experimental results and exemplify its use and capability assessing the impact of the channel scaling on the performance of MoS₂-based FETs targeting RF applications.

SUBMITTER: Toral-Lopez A

PROVIDER: S-EPMC9417752 | biostudies-literature | 2021 Apr

REPOSITORIES: biostudies-literature

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Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors.

Toral-Lopez A A Pasadas F F Marin E G EG Medina-Rull A A Gonzalez-Medina J M JM Ruiz F G FG Jiménez D D Godoy A A

Nanoscale advances 20210312 8

Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support the experimental activities and to provide them with useful guidelines becomes essential. In this context, we propose a theoretical approach that combines numerical simulations and small-signal modeling to analyze 2DM-based FETs for radio-frequency applications. ...[more]

PMID: 36133760

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Project description:It is well-known that the improvement in the performance of organic field-effect transistors (OFETs) relies primarily on growth properties of organic molecules on gate dielectrics, their interface behavior, and on understanding the physical processes occurring during device operation. In this work, the relation of varying the dielectric materials in an n-type OFET device based on 1,7-dibromo-N,N'-dioctadecyl-3,4,9,10-perylenetetracarboxylic diimide (Br2PTCDI-C18) molecule on a low-cost glass substrate at different channel lengths is reported, which is conceptually very important and fundamental in the context of device performance. Anodized alumina (Al2O3) along with dielectric films of polyvinyl alcohol (PVA) or polymethylmethacrylate (PMMA) was used to fabricate the devices and study their influence on various transistor properties. In addition, the effects of a thin hexamethyldisilazane (HMDS) layer on the performance of OFETs including their contact resistances were studied with the channel length variations. The devices with PVA dielectric material exhibited the maximum mobility values of 0.012-0.025 cm2 V-1 s-1 irrespective of varying channel lengths from 25 to 190 μm. The bias-stress measurements were recorded to realize the effects of the channel length and HMDS layer on the stability of the devices. The on/off ratios and electrical stabilities of these devices were enhanced significantly by modifying the surface of the PVA dielectric layer using a thin layer of HMDS. Similarly, in the case of PMMA dielectric layer, a drastic enhancement in the on/off ratio and bias-stress stability was observed. Characterization of all devices at different channel lengths using different dielectric materials permitted us to identify the effects of contact resistance on OFET devices. The stability of the devices in relation to the bias-stress measurements of devices by varying channel lengths and surface modification was systematically investigated. A careful analysis of oxide gate dielectrics modified with polymer-based dielectric materials, contact resistance, influence of thin HMDS layer on the electrical properties, and other parameters on top-contact bottom-gated configured n-type OFET devices is presented herein.

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Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors.

Publications

Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors.

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