Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition.

ABSTRACT: The electrical properties of graphene on dielectric substrates, such as silicon carbide (SiC), have received much attention due to their interesting applications. This work presents a method to grow graphene on a 6H-SiC substrate at a pressure of 35 Torr by using the hot filament chemical vapor deposition (HFCVD) technique. The graphene deposition was conducted in an atmosphere of methane and hydrogen at a temperature of 950 °C. The graphene films were analyzed using Raman spectroscopy, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray, and X-ray photoelectron spectroscopy. Raman mapping and AFM measurements indicated that few-layer and multilayer graphene were deposited from the external carbon source depending on the growth parameter conditions. The compositional analysis confirmed the presence of graphene deposition on SiC substrates and the absence of any metal involved in the growth process.

SUBMITTER: Rodriguez-Villanueva S

PROVIDER: S-EPMC9458213 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition.

Rodríguez-Villanueva Sandra S Mendoza Frank F Weiner Brad R BR Morell Gerardo G

Nanomaterials (Basel, Switzerland) 20220901 17

The electrical properties of graphene on dielectric substrates, such as silicon carbide (SiC), have received much attention due to their interesting applications. This work presents a method to grow graphene on a 6H-SiC substrate at a pressure of 35 Torr by using the hot filament chemical vapor deposition (HFCVD) technique. The graphene deposition was conducted in an atmosphere of methane and hydrogen at a temperature of 950 °C. The graphene films were analyzed using Raman spectroscopy, scanning ...[more]

PMID: 36080070

Similar Datasets

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition.

Project description:The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates.

| S-EPMC6199066 | biostudies-literature

Large-area high-throughput synthesis of monolayer graphene sheet by Hot Filament Thermal Chemical Vapor Deposition.

Project description:We report hot filament thermal CVD (HFTCVD) as a new hybrid of hot filament and thermal CVD and demonstrate its feasibility by producing high quality large area strictly monolayer graphene films on Cu substrates. Gradient in gas composition and flow rate that arises due to smart placement of the substrate inside the Ta filament wound alumina tube accompanied by radical formation on Ta due to precracking coupled with substrate mediated physicochemical processes like diffusion, polymerization etc., led to graphene growth. We further confirmed our mechanistic hypothesis by depositing graphene on Ni and SiO(2)/Si substrates. HFTCVD can be further extended to dope graphene with various heteroatoms (H, N, and B, etc.,), combine with functional materials (diamond, carbon nanotubes etc.,) and can be extended to all other materials (Si, SiO(2), SiC etc.,) and processes (initiator polymerization, TFT processing) possible by HFCVD and thermal CVD.

| S-EPMC3448070 | biostudies-literature

Growth of Low-Defect Nitrogen-Doped Graphene Film Using Condensation-Assisted Chemical Vapor Deposition Method.

Project description:It is significantly important to modulate the electrical properties of graphene films through doping for building desired electronic devices. One of the effective doping methods is the chemical vapor deposition (CVD) of graphene films with heteroatom doping during the process, but this usually results in nitrogen-doped graphene with low doping levels, high defect density, and low carrier mobility. In this work, we developed a novel condensation-assisted CVD method for the synthesis of high-quality nitrogen-doped graphene (NG) films at low temperatures of 400 °C using solid 3,4,5-trichloropyridine as a carbon and nitrogen source. The condensation system was employed to reduce the volatilization of the solid source during the non-growth stage, which leads to a great improvement of quality of as-prepared NG films. Compared to the one synthesized using conventional CVD methods, the NG films synthesized using condensation-assisted CVD present extremely low defects with a ratio of from D- to G-peak intensity (ID/IG) in the Raman spectrum lower than 0.35. The corresponding total N content, graphitic nitrogen/total nitrogen ratio, and carrier mobility reach 3.2 at%, 67%, and 727 cm2V-1S-1, respectively. This improved condensation-assisted CVD method provides a facile and well-controlled approach for fabricating high-quality NG films, which would be very useful for building electronic devices with high electrical performance.

| S-EPMC9921703 | biostudies-literature

Transferless Inverted Graphene/Silicon Heterostructures Prepared by Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon on CVD Graphene.

Project description:The heterostructures of two-dimensional (2D) and three-dimensional (3D) materials represent one of the focal points of current nanotechnology research and development. From an application perspective, the possibility of a direct integration of active 2D layers with exceptional optoelectronic and mechanical properties into the existing semiconductor manufacturing processes is extremely appealing. However, for this purpose, 2D materials should ideally be grown directly on 3D substrates to avoid the transferring step, which induces damage and contamination of the 2D layer. Alternatively, when such an approach is difficult-as is the case of graphene on noncatalytic substrates such as Si-inverted structures can be created, where the 3D material is deposited onto the 2D substrate. In the present work, we investigated the possibility of using plasma-enhanced chemical vapor deposition (PECVD) to deposit amorphous hydrogenated Si (a-Si:H) onto graphene resting on a catalytic copper foil. The resulting stacks created at different Si deposition temperatures were investigated by the combination of Raman spectroscopy (to quantify the damage and to estimate the change in resistivity of graphene), temperature-dependent dark conductivity, and constant photocurrent measurements (to monitor the changes in the electronic properties of a-Si:H). The results indicate that the optimum is 100 C deposition temperature, where the graphene still retains most of its properties and the a-Si:H layer presents high-quality, device-ready characteristics.

| S-EPMC7153506 | biostudies-literature

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide.

Project description:Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10(-9) in relative value, but operating at lower magnetic fields than 10?T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10?T up to 19?T at 1.4?K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices.

| S-EPMC4410644 | biostudies-literature

Direct synthesis of graphene on silicon oxide by low temperature plasma enhanced chemical vapor deposition.

Project description:Direct graphene growth on silicon with a native oxide using plasma enhanced chemical vapour deposition at low temperatures [550 °C-650 °C] is demonstrated for the first time. It is shown that the fine-tuning of a two-step synthesis with gas mixtures C2H2/H2 yields monolayer and few layer graphene films with a controllable domain size from 50 nm to more than 300 nm and the sheet resistance ranging from 8 k? sq-1 to less than 1.8 k? sq-1. Differences are understood in terms of the interaction of the plasma species - chiefly atomic H - with the deposited graphene and the native oxide layer. The proposed low temperature direct synthesis on an insulating substrate does not require any transfer processes and improves the compatibility with the current industrial processes.

| S-EPMC6130772 | biostudies-literature

Formation mechanism of overlapping grain boundaries in graphene chemical vapor deposition growth.

Project description:The formation of grain boundaries (GBs) in graphene films is both fundamentally interesting and practically important for many applications. A GB in graphene is known as a linear defect and is formed during the coalescence of two single crystalline graphene domains. The covalent binding between domains is broadly known as the mechanism of GB formation during graphene chemical vapor deposition (CVD) growth. Here, we demonstrate another GB formation mechanism, where two graphene domains are connected by weak van der Waals interactions between overlapping graphene layers. The formation mechanism of the overlapping GBs (OLGBs) is systematically explored theoretically and the proposed conditions for forming OLGBs are validated by experimental observations. This discovery leads to a deep understanding of the mechanism of graphene CVD growth and reveals potential means for graphene quality control in CVD synthesis.

| S-EPMC5408562 | biostudies-literature

Comparison of diamond nanoparticles captured on the floating and grounded membranes in the hot filament chemical vapor deposition process.

Project description:Negatively charged diamond nanoparticles are known to be generated in the gas phase of the hot filament chemical vapor deposition (HFCVD) process. However, the structures of these nanoparticles remain unknown. Also, the effect of charging on the stability of nanodiamond structures has not been studied experimentally. Here, by installing a capturing apparatus in an HFCVD reactor, we succeeded in capturing nanoparticles on the floating and grounded SiO, carbon, and graphene membranes of a copper transmission electron microscope grid during HFCVD. We examined the effect of charge on the crystal structure of nanodiamonds captured for 10 s under various conditions and identified four carbon allotropes, which are i-carbon, hexagonal diamond, n-diamond, and cubic diamond, by analyzing 150 d-spacings of ∼100 nanoparticles for each membrane. Nanoparticles captured on the floating membrane consisted mainly of cubic diamond and n-diamond, whereas those captured on the grounded membrane consisted mainly of i-carbon. Diamond particles deposited for 8 h on the floating silicon (Si) substrate exhibited an octahedron shape with well-developed facets, and a high-intensity 1332 cm-1 Raman peak, whereas diamond particles deposited on the grounded Si substrate showed a spherical shape partially covered with crystalline facets with a broad G-band Raman peak. These results indicate that charging stabilizes the diamond structure.

| S-EPMC8694773 | biostudies-literature

The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition.

Project description:Thin-film Si grows layer by layer on Si(001)-(2 × 1):H in plasma-enhanced chemical vapor deposition. Here we investigate the reason why this occurs by using quantum chemical molecular dynamics and density functional theory calculations. We propose a dangling bond (DB) diffusion model as an alternative to the SiH3 diffusion model, which is in conflict with first-principles calculation results and does not match the experimental evidence. In our model, DBs diffuse rapidly along an upper layer consisting of Si-H3 sites, and then migrate from the upper layer to a lower layer consisting of Si-H sites. The subsequently incident SiH3 radical is then adsorbed onto the DB in the lower layer, producing two-dimensional growth. We find that DB diffusion appears analogous to H diffusion and can explain the reason why the layer-by-layer growth occurs.

| S-EPMC4360731 | biostudies-other

Giant Magnetoresistance in a Chemical Vapor Deposition Graphene Constriction.

Project description:Magnetic field-driven insulating states in graphene are associated with samples of very high quality. Here, this state is shown to exist in monolayer graphene grown by chemical vapor deposition (CVD) and wet transferred on Al2O3 without encapsulation with hexagonal boron nitride (h-BN) or other specialized fabrication techniques associated with superior devices. Two-terminal measurements are performed at low temperature using a GaAs-based multiplexer. During high-throughput testing, insulating properties are found in a 10 μm long graphene device which is 10 μm wide at one contact with an ≈440 nm wide constriction at the other. The low magnetic field mobility is ≈6000 cm2 V-1 s-1. An energy gap induced by the magnetic field opens at charge neutrality, leading to diverging resistance and current switching on the order of 104 with DC bias voltage at an approximate electric field strength of ≈0.04 V μm-1 at high magnetic field. DC source-drain bias measurements show behavior associated with tunneling through a potential barrier and a transition between direct tunneling at low bias to Fowler-Nordheim tunneling at high bias from which the tunneling region is estimated to be on the order of ≈100 nm. Transport becomes activated with temperature from which the gap size is estimated to be 2.4 to 2.8 meV at B = 10 T. Results suggest that a local electronically high quality region exists within the constriction, which dominates transport at high B, causing the device to become insulating and act as a tunnel junction. The use of wet transfer fabrication techniques of CVD material without encapsulation with h-BN and the combination with multiplexing illustrates the convenience of these scalable and reasonably simple methods to find high quality devices for fundamental physics research and with functional properties.

| S-EPMC9098165 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data