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Addressing gain-bandwidth trade-off by a monolithically integrated photovoltaic transistor.

ABSTRACT: The gain-bandwidth trade-off limits the development of high-performance photodetectors; i.e., the mutual restraint between the response speed and gain has intrinsically limited performance optimization of photomultiplication phototransistors and photodiodes. Here, we show that a monolithically integrated photovoltaic transistor can solve this dilemma. In this structure, the photovoltage generated by the superimposed perovskite solar cell, acting as a float gate, is amplified by the underlying metal oxide field-effect transistor. By eliminating deep-trap defects through processing optimization, we achieved devices with a maximum responsivity close to 6 × 10⁴ A/W, a specific detectivity (D*) of 1.06 × 10¹³ Jones, and an f_3dB of 1.2 MHz at a low driving voltage of 3 V. As a result, a record gain-bandwidth product is achieved. The device further exhibits the advantage in photoplethysmography detection with weak illuminations, where our device accurately detects the detailed features that are out of the capability of conventional photodetectors.

SUBMITTER: Li Y

PROVIDER: S-EPMC9506725 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature

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Addressing gain-bandwidth trade-off by a monolithically integrated photovoltaic transistor.

Li Yuanzhe Y Chen Guowei G Zhao Shenghe S Liu Chuan C Zhao Ni N

Science advances 20220923 38

The gain-bandwidth trade-off limits the development of high-performance photodetectors; i.e., the mutual restraint between the response speed and gain has intrinsically limited performance optimization of photomultiplication phototransistors and photodiodes. Here, we show that a monolithically integrated photovoltaic transistor can solve this dilemma. In this structure, the photovoltage generated by the superimposed perovskite solar cell, acting as a float gate, is amplified by the underlying me ...[more]

PMID: 36149950

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Project description:Polarization-independent dielectric meta-lens is proposed to monolithically integrate with a HgCdTe infrared photodetector to concentrate power flux into a reduced photosensitive area for performance enhancement. Although a reduction in photosensitive area could suppress the dark current, the more seriously reduced light absorptance would degrade the specific detectivity D*. The integration of the meta-lens could reverse the situation by improving the absorptance of the photosensitive region. The meta-lens composed of an array of nano-pillars with varying diameters is formed by carving the CdZnTe substrate of the HgCdTe detector so that the integration could be accomplished in situ. The meta-lens focuses the incident light through the CdZnTe medium and at the HgCdTe photosensitive region. The focal spot is about the wavelength size and the focusing efficiency is above 63%. Concerning a HgCdTe detector with a pitch size of 40 μm × 40 μm, when the photosensitive area is reduced to 5 μm × 5 μm, the meta-lens could still keep the light absorptance above 50%, which is 49 times higher than that of the device without the meta-lens. The dark current reduces with the decreasing photosensitive area in a linear manner. When the photosensitive area shrinks from 40 μm × 40 μm to 10 μm × 10 μm or 5 μm × 5 μm, the dark current reduces by 16 or even 64 times. Compared to the pristine device, the employment of the meta-lens together with the reduction in photosensitive area could enhance D* by 5.5 times for the photosensitive area as 5 μm × 5 μm. Further, the meta-lens exhibits a good dispersion tolerance over the wavelength range from 3.3 μm to 5 μm. The averaged detectivity enhancement over this spectrum range is around 3 times for the photosensitive area as 5 μm × 5 μm. The angular response of the meta-lens integrated detector depends on the focal length. For a focal length of 73 µm or 38 µm, the angle of view for a 5 μm × 5 μm photosensitive area is 4.0° or 7.7°. For the inter-pillar distance to be 2 µm in our design, the influence of the coupling effect between the nano-pillars on the performance of the meta-lens is little.

Dataset Information

Addressing gain-bandwidth trade-off by a monolithically integrated photovoltaic transistor.

Publications

Addressing gain-bandwidth trade-off by a monolithically integrated photovoltaic transistor.

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