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Mixed Dimensional ZnO/WSe₂ Piezo-gated Transistor with Active Millinewton Force Sensing.

ABSTRACT: This work demonstrates a mixed-dimensional piezoelectric-gated transistor in the microscale that could be used as a millinewton force sensor. The force-sensing transistor consists of 1D piezoelectric zinc oxide (ZnO) nanorods (NRs) as the gate control and multilayer tungsten diselenide (WSe₂) as the transistor channel. The applied mechanical force on piezoelectric NRs can induce a drain-source current change (ΔI_ds) on the WSe₂ channel. The different doping types of the WSe₂ channel have been found to lead to different directions of ΔI_ds. The pressure from the calibration weight of 5 g has been observed to result in an ∼30% I_ds change for ZnO NRs on the p-type doped WSe₂ device and an ∼-10% I_ds change for the device with an n-type doped WSe₂. The outcome of this work would be useful for applications in future human-machine interfaces and smart biomedical tools.

SUBMITTER: Geng Y

PROVIDER: S-EPMC9634694 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature

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Mixed Dimensional ZnO/WSe2 Piezo-gated Transistor with Active Millinewton Force Sensing.

Geng Yulin Y Xu Jing J Bin Che Mahzan Muhammad Ammar MA Lomax Peter P Saleem Muhammad Mubasher MM Mastropaolo Enrico E Cheung Rebecca R

ACS applied materials & interfaces 20221019 43

This work demonstrates a mixed-dimensional piezoelectric-gated transistor in the microscale that could be used as a millinewton force sensor. The force-sensing transistor consists of 1D piezoelectric zinc oxide (ZnO) nanorods (NRs) as the gate control and multilayer tungsten diselenide (WSe2) as the transistor channel. The applied mechanical force on piezoelectric NRs can induce a drain-source current change (ΔIds) on the WSe2 channel. The different doping ...[more]

PMID: 36259783

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