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Exciton tuning in monolayer WSe2 via substrate induced electron doping.

ABSTRACT: We report large exciton tuning in WSe2 monolayers via substrate induced non-degenerate doping. We observe a redshift of ∼62 meV for the A exciton together with a 1-2 orders of magnitude photoluminescence (PL) quenching when the monolayer WSe2 is brought in contact with highly oriented pyrolytic graphite (HOPG) compared to dielectric substrates such as hBN and SiO2. As the evidence of doping from HOPG to WSe2, a drastic increase of the intensity ratio of trions to neutral excitons was observed. Using a systematic PL and Kelvin probe force microscopy (KPFM) investigation on WSe2/HOPG, WSe2/hBN, and WSe2/graphene, we conclude that this unique excitonic behavior is induced by electron doping from the substrate. Our results propose a simple yet efficient way for exciton tuning in monolayer WSe2, which plays a central role in the fundamental understanding and further device development.

SUBMITTER: Pan Y 

PROVIDER: S-EPMC9680939 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature

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Exciton tuning in monolayer WSe<sub>2</sub> <i>via</i> substrate induced electron doping.

Pan Yang Y   Rahaman Mahfujur M   He Lu L   Milekhin Ilya I   Manoharan Gopinath G   Aslam Muhammad Awais MA   Blaudeck Thomas T   Willert Andreas A   Matković Aleksandar A   Madeira Teresa I TI   Zahn Dietrich R T DRT  

Nanoscale advances 20221025 23

We report large exciton tuning in WSe<sub>2</sub> monolayers <i>via</i> substrate induced non-degenerate doping. We observe a redshift of ∼62 meV for the A exciton together with a 1-2 orders of magnitude photoluminescence (PL) quenching when the monolayer WSe<sub>2</sub> is brought in contact with highly oriented pyrolytic graphite (HOPG) compared to dielectric substrates such as hBN and SiO<sub>2</sub>. As the evidence of doping from HOPG to WSe<sub>2</sub>, a drastic increase of the intensity  ...[more]

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