Temperature dependence of 1∕f noise mechanisms in silicon nanowire biochemical field effect transistors.
Ontology highlight
ABSTRACT:
SUBMITTER: Rajan NK
PROVIDER: S-EPMC3017570 | biostudies-other | 2010 Dec
REPOSITORIES: biostudies-other
Similar Datasets
Project description:Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8?nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D electronic transport characteristics. The 1D regime allows excellent gate modulation with near ideal subthreshold slopes, on- to off-current ratios above 108 and high on-currents at room temperature. Universal conductance scaling as a function of voltage and temperature similar to previous reports of Luttinger liquids and Coulomb gap behaviour at low temperatures suggests that many body effects including electron-electron interactions are important in describing the electronic transport. This suggests that modelling of such nanowire devices will require 1D models which include many body interactions to accurately simulate the electronic transport to optimise the technology but also suggest that 1D effects could be used to enhance future transistor performance.
| S-EPMC5462787 | biostudies-literature
Project description:We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through their high surface-to-volume ratio, which increases carrier-tunneling region with no additional device area. The on-state current can be enhanced by increasing the nanowire height, decreasing equivalent oxide thickness (EOT) or creating a nanowire array. The off-state current is also manageable for power saving through selective epitaxial growth at the top-side nanowire region. CS TFETs with an EOT of 0.8?nm and an aspect ratio of 20 for the core nanowire region provide the largest drain current ranges with point SS values below 60?mV/dec and superior on/off current ratio under all operation voltages of 0.5, 0.7, and 1.0?V. These devices are promising for low-power applications at low fabrication cost and high device density.
| S-EPMC5255564 | biostudies-other
Project description:We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.
| S-EPMC5424868 | biostudies-literature
Project description:The combined capabilities of both a nonplanar design and nonconventional carrier injection mechanisms are subject to recent scientific investigations to overcome the limitations of silicon metal oxide semiconductor field effect transistors. In this Letter, we present a multimode field effect transistors device using silicon nanowires that feature an axial n-type/intrinsic doping junction. A heterostructural device design is achieved by employing a self-aligned nickel-silicide source contact. The polymorph operation of the dual-gate device enabling the configuration of one p- and two n-type transistor modes is demonstrated. Not only the type but also the carrier injection mode can be altered by appropriate biasing of the two gate terminals or by inverting the drain bias. With a combined band-to-band and Schottky tunneling mechanism, in p-type mode a subthreshold swing as low as 143 mV/dec and an ON/OFF ratio of up to 10(4) is found. As the device operates in forward bias, a nonconventional tunneling transistor is realized, enabling an effective suppression of ambipolarity. Depending on the drain bias, two different n-type modes are distinguishable. The carrier injection is dominated by thermionic emission in forward bias with a maximum ON/OFF ratio of up to 10(7) whereas in reverse bias a Schottky tunneling mechanism dominates the carrier transport.
| S-EPMC4245716 | biostudies-literature
Project description:In this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the channel and gate oxide. The band diagram, I-V characteristics, memory window, and operation were analyzed using a commercial technology computer-aided design simulation. In an n-channel FBFET, the memory window narrows (widens) from 5.47 to 3.59 V (9.24 V), as the density of the positive (negative) trap charges increases. In contrast, in the p-channel FBFET, the memory window widens (narrows) from 5.38 to 7.38 V (4.18 V), as the density of the positive (negative) trap charges increases. Moreover, we investigate the difference in the output drain current based on the interface trap charges during the memory operation.
| S-EPMC8452620 | biostudies-literature
Project description:We demonstrate the functionalization of silicon nanowire based field effect transistors (SiNW FETs) FETs with stimuli-responsive polymer brushes of poly(N-isopropylacrylamide) (PNIPAAM) and poly(acrylic acid) (PAA). Surface functionalization was confirmed by atomic force microscopy, contact angle measurements, and verified electrically using a silicon nanowire based field effect transistor sensor device. For thermo-responsive PNIPAAM, the physicochemical properties (i.e., a reversible phase transition, wettability) were induced by crossing the lower critical solution temperature (LCST) of about 32 °C. Taking advantage of this property, osteosarcomic SaoS-2 cells were cultured on PNIPAAM-modified sensors at temperatures above the LCST, and completely detached by simply cooling. Next, the weak polyelectrolyte PAA, that is sensitive towards alteration of pH and ionic strength, was used to cover the silicon nanowire based device. Here, the increase of pH will cause deprotonation of the present carboxylic (COOH) groups along the chains into negatively charged COO- moieties that repel each other and cause swelling of the polymer. Our experimental results suggest that this functionalization enhances the pH sensitivity of the SiNW FETs. Specific receptor (bio-)molecules can be added to the polymer brushes by simple click chemistry so that functionality of the brush layer can be tuned optionally. We demonstrate at the proof-of concept-level that osteosarcomic Saos-2 cells can adhere to PNIPAAM-modified FETs, and cell signals could be recorded electrically. This study presents an applicable route for the modification of highly sensitive, versatile FETs that can be applied for detection of a variety of biological analytes.
| S-EPMC7143225 | biostudies-literature
Project description:The signal-to-noise ratio (SNR) for silicon nanowire field-effect transistors operated in an electrolyte environment is an essential figure-of-merit to characterize and compare the detection limit of such devices when used in an exposed channel configuration as biochemical sensors. We employ low frequency noise measurements to determine the regime for optimal SNR. We find that SNR is not significantly affected by the electrolyte concentration, composition, or pH, leading us to conclude that the major contributions to the SNR come from the intrinsic device quality. The results presented here show that SNR is maximized at the peak transconductance.
| S-EPMC3144966 | biostudies-other
Project description:Magneto-electronic logic is an innovative approach to performing high-efficiency computations. Additionally, the ultra-large scale integration requirement for computation strongly suggests exploiting magnetoresistance effects in non-magnetic semiconductor materials. Here, we demonstrate the magnetoresistance effect in a silicon nanowire field effect transistor (SNWT) fabricated by complementary metal-oxide-semiconductor (CMOS)-compatible technology. Our experimental results show that the sign and the magnitude of the magnetoresistance in SNWTs can be effectively controlled by the drain-source voltage and the gate-source voltage, respectively, playing the role of a multi-terminal tunable magnetoresistance device. Various current models are established and in good agreement with the experimental results that describe the impact of electrical voltage and magnetic field on magnetoresistance, which provides design feasibility for the high-density magneto-electronic circuit. Such findings will further pave the way for nanoscale silicon-based magneto-electronics logic devices and show a possible path beyond the developmental limits of CMOS logic.
| S-EPMC6185961 | biostudies-literature
Project description:We demonstrate the temperature mediated applications of a previously proposed novel localized dielectric heating method on the surface of dual purpose silicon field effect transistor (FET) sensor-heaters and perform modeling and characterization of the underlying mechanisms. The FETs are first shown to operate as electrical sensors via sensitivity to changes in pH in ionic fluids. The same devices are then demonstrated as highly localized heaters via investigation of experimental heating profiles and comparison to simulation results. These results offer further insight into the heating mechanism and help determine the spatial resolution of the technique. Two important biosensor platform applications spanning different temperature ranges are then demonstrated: a localized heat-mediated DNA exchange reaction and a method for dense selective functionalization of probe molecules via the heat catalyzed complete desorption and reattachment of chemical functionalization to the transistor surfaces. Our results show that the use of silicon transistors can be extended beyond electrical switching and field-effect sensing to performing localized temperature controlled chemical reactions on the transistor itself.
| S-EPMC3059398 | biostudies-literature
Project description:Although wrap-gated nanowire field-effect-transistors (NWFETs) have been explored as an ideal electronic device geometry for low-power and high-frequency applications, further performance enhancement and practical implementation are still suffering from electron scattering on nanowire surface/interface traps between the nanowire channel and gate dielectric as well as the complicated device fabrication scheme. Here, we report the development of high-performance wrap-gated InGaAs NWFETs using conventional sputtered Al2O3 layers as gate dielectrics, instead of the typically employed atomic layer deposited counterparts. Importantly, the surface chemical passivation of NW channels performed right before the dielectric deposition is found to significantly alleviate plasma induced defect traps on the NW channel. Utilizing this passivation, the wrap-gated device exhibits superior electrical performances: a high ION/IOFF ratio of ~ 2 × 10(6), an extremely low sub-threshold slope of 80 mV/decade and a peak field-effect electron mobility of ~ 1600 cm(2)/(Vs) at VDS = 0.1 V at room temperature, in which these values are even better than the ones of state-of-the-art NWFETs reported so far. By combining sputtering and pre-deposition chemical passivation to achieve high-quality gate dielectrics for wrap-gated NWFETs, the superior gate coupling and electrical performances have been achieved, confirming the effectiveness of our hybrid approach for future advanced electronic devices.
| S-EPMC4660349 | biostudies-literature