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Homoepitaxial SrTiO3(111) Film with High Dielectric Performance and Atomically Well-Defined Surface.

ABSTRACT: The six-fold symmetry possessed by the (111) surfaces of perovskite oxides allows the epitaxial growth of novel quantum materials such as topological insulators. The dielectric SrTiO3(111) thin film is an ideal buffer layer, providing the readily tunability of charge density in gate-controlled structures. But the high-quality film growth is challenging due to its strong surface polarity as well as the difficulty of obtaining the chemical stoichiometry. Here we show that the layer-by-layer growth of homoepitaxial SrTiO3(111) thin films can be achieved in molecular beam epitaxy method by keeping the growing surface reconstructed. And the cation stoichiometry is optimized precisely with the reflective high energy electron diffraction as the feedback signal that changes sensitively to the variation of metal concentration during growth. With atomically well-defined surfaces, the SrTiO3(111) films show high dielectric performance with the charge density modulated in the range of 2 × 10(13)/cm(2) with the back gate voltage lower than 0.2 V. Methods of further broadening the range are also discussed.

SUBMITTER: Liang Y

PROVIDER: S-EPMC4466594 | biostudies-other | 2015

REPOSITORIES: biostudies-other

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Project description:The key impact and significance of a multilayer polymer-based dielectric system on the remarkable photoresponse properties of zinc phthalocyanine (ZnPc)-based photosensitive organic field-effect transistors (PS-OFETs) have been systematically analyzed at various incident optical powers. A combination of inorganic aluminum oxide (Al2O3) and organic nonpolar poly(methyl methacrylate) (PMMA) is used as the bilayer dielectric configuration, whereas in the trilayer dielectric system, a bilayer polymer dielectric, consisting of PMMA, as the low-k dielectric polymer, on top of poly(vinyl alcohol) (PVA), the high-k polar dielectric, has been fabricated along with Al2O3 as the third layer. Before fabricating the OFETs, a systematic optimization of the nature of growth of the ZnPc molecules, deposited on PMMA-coated glass substrates at different substrate temperatures (T s) was performed and examined by atomic-force microscopy, field-emission scanning electron microscopy, X-ray diffraction, and Raman analysis. At 90 °C, the fabricated PS-OFETs with the Al2O3/PVA/PMMA trilayer dielectric configuration showed the best p-channel behavior, with an enhanced and remarkable photoresponsivity of R ∼ 9689.39 A W-1 compared to that of the Al2O3/PMMA bilayer dielectric system (R ∼ 2679.40 A W-1) due to the polarization of the dipoles inside the polar PVA dielectric, which increases the charge transport through the channel. The charge carrier mobility of the device also improved by one order (μh ∼ 1.3 × 10-2 cm2 V-1 s-1) compared to that of the bilayer dielectric configuration (μh ∼ 3.5 × 10-3 cm2 V-1 s-1). The observed specific detectivity (D*) and NEP values of the bilayer dielectric system were 6.01 × 1013 Jones and 2.655 × 10-17 W Hz-1/2, whereas for the trilayer dielectric system, the observed D* and NEP values were 5.13 × 1014 Jones and 1.043 × 10-17 W Hz-1/2, respectively. Additionally, the operating voltage of each of the fabricated devices was also very low (-10 V) due to the influence of the inorganic high-k Al2O3 dielectric layer. The electrical stability of all of the fabricated devices was also investigated by bias stress analysis under both light and dark conditions in vacuum. To the best of our knowledge, the photoresponsivity (R) reported here with an Al2O3/PVA/PMMA trilayer dielectric configuration is the highest reported value for thin film-based PS-OFETs, at a remarkably low operating voltage of -10 V, on low-cost glass substrates without indium tin oxide or/and Si/SiO2.

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Homoepitaxial SrTiO3(111) Film with High Dielectric Performance and Atomically Well-Defined Surface.

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