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Large transport J(c) in Cu-sheathed Sr(0.6)K(0.4)Fe2As2 superconducting tape conductors.

ABSTRACT: Copper sheath is the first choice for manufacturing high-T(c) superconducting wires and tapes because of its high electrical and thermal conductivities, low-cost and good mechanical properties. However, Cu can easily react with superconducting cores, such as BSCCO, MgB2 and pnictides, and therefore drastically decrease the transport J(c). Here, we report the fabrication of Cu-sheathed Sr(1-x)K(x)Fe2As2 tapes with superior J(c) performance using a simple hot pressing method that is capable of eliminating the lengthy high-temperature sintering. We obtained high-quality Sr(1-x)K(x)Fe2As2 tapes with processing at 800 °C for 30 minutes and measured high T(c) and sharp transition. By this rapid fabrication, Cu sheath does not give rise to apparent reaction layer, and only slightly diffuses into Sr-122 core. As a consequence, we achieved high transport J(c) of 3.1 × 10(4) A/cm(2) in 10 T and 2.7 × 10(4) A/cm(2) in 14 T at 4.2 K. The in-field J(c) performance is by far the highest reported for Cu-sheathed high-T(c) conductors. More importantly, Cu-sheathed Sr-122 tapes also showed a high J(e) value of 1.0 × 10(4) A/cm(2) in 10 T at 4.2 K, which has reached the widely accepted practical level for applications. These results demonstrate that Cu is a very promising sheath for the practical application of pnictide conductors.

SUBMITTER: Lin H

PROVIDER: S-EPMC4485074 | biostudies-other | 2015

REPOSITORIES: biostudies-other

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Project description:The further development of solid oxide fuel and electrolysis cells (SOFC/SOEC) strongly relies on research activities dealing with electrode materials. Recent studies showed that under operating conditions many perovskite-type oxide electrodes are prone to changes of their surface composition, leading to severe changes of their electrochemical performance. This results in a large scatter of data in literature and complicates comparison of materials. Moreover, little information is available on the potentially excellent properties of surfaces immediately after preparation, that is, before any degradation by exposure to other gas compositions or temperature changes. Here, we introduce in situ impedance spectroscopy during pulsed laser deposition (IPLD) as a new method for electrochemical analysis of mixed ionic and electronic conducting (MIEC) thin films during growth. First, this approach can truly reveal the properties of as-prepared MIEC electrode materials, since it avoids any alterations of their surface between preparation and investigation. Second, the measurements during growth give information on the thickness dependence of film properties. This technique is applied to La0.6Sr0.4CoO3-? (LSC), one of the most promising SOFC/SOEC oxygen electrode material. From the earliest stages of LSC film deposition on yttria-stabilized zirconia (YSZ) to a fully grown thin film of 100 nm thickness, data are gained on the oxygen exchange kinetics and the defect chemistry of LSC. A remarkable reproducibility is found in repeated film growth experiments, not only for the bulk related chemical capacitance but also for the surface related polarization resistance (±10%). Polarization resistances of as-prepared LSC films are extraordinarily low (2.0 ? cm2 in 40 ?bar O2 at 600 °C). LSC films on YSZ and on La0.95Sr0.05Ga0.95Mg0.05O3-? (LSGM) single crystals exhibit significantly different electrochemical properties, possibly associated with the tensile strain of LSC on LSGM.

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Large transport J(c) in Cu-sheathed Sr(0.6)K(0.4)Fe2As2 superconducting tape conductors.

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