Mechanical Flip-Chip for Ultra-High Electron Mobility Devices.
Ontology highlight
ABSTRACT:
SUBMITTER: Bennaceur K
PROVIDER: S-EPMC4585730 | biostudies-other | 2015
REPOSITORIES: biostudies-other
Similar Datasets
Project description:Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where electrons are spatially confined inside the core. Here, it is demonstrated that the strain in lattice-mismatched core/shell nanowires can affect the effective mass of electrons in a way that boosts their mobility to distinct levels. Specifically, electrons inside the hydrostatically tensile-strained gallium arsenide core of nanowires with a thick indium aluminium arsenide shell exhibit mobility values 30-50 % higher than in equivalent unstrained nanowires or bulk crystals, as measured at room temperature. With such an enhancement of electron mobility, strained gallium arsenide nanowires emerge as a unique means for the advancement of transistor technology.
| S-EPMC8599471 | biostudies-literature
Project description:In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such as silicon and indium gallium zinc oxide due to high mobility value. However, zinc oxynitride has been suffered from poor reproducibility due to relatively low binding energy of nitrogen with zinc, resulting in the instability of composition and its device performance. Here we performed post argon plasma process on zinc oxynitride film, forming nano-crystalline structure in stable amorphous matrix which hampers the reaction of oxygen with zinc. Therefore, material properties and device performance of zinc oxynitride are greatly enhanced, exhibiting robust compositional stability even exposure to air, uniform phase, high electron mobility, negligible fast transient charging and low noise characteristics. Furthermore, We expect high mobility and high stability zinc oxynitride customized by plasma process to be applicable to a broad range of semiconductor and display devices.
| S-EPMC4820723 | biostudies-literature
Project description:Thermoelectric conversion is an energy harvesting technology that directly converts waste heat from various sources into electricity by the Seebeck effect of thermoelectric materials with a large thermopower (S), high electrical conductivity (?), and low thermal conductivity (?). State-of-the-art nanostructuring techniques that significantly reduce ? have realized high-performance thermoelectric materials with a figure of merit (ZT = S2???T??-1) between 1.5 and 2. Although the power factor (PF = S2??) must also be enhanced to further improve ZT, the maximum PF remains near 1.5-4 mW m-1 K-2 due to the well-known trade-off relationship between S and ?. At a maximized PF, ? is much lower than the ideal value since impurity doping suppresses the carrier mobility. A metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) structure on an AlGaN/GaN heterostructure is prepared. Applying a gate electric field to the MOS-HEMT simultaneously modulates S and ? of the high-mobility electron gas from -490 µV K-1 and ?10-1 S cm-1 to -90 µV K-1 and ?104 S cm-1, while maintaining a high carrier mobility (?1500 cm2 V-1 s-1). The maximized PF of the high-mobility electron gas is ?9 mW m-1 K-2, which is a two- to sixfold increase compared to state-of-the-art practical thermoelectric materials.
| S-EPMC5770668 | biostudies-literature
Project description:Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InxGa1-xSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric InxGa1-xSb (0.09 < x < 0.28) NWs on amorphous substrates with the uniform phase-purity and <110 >-orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm2 V-1 s-1 for In0.09Ga0.91Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In0.28Ga0.72Sb NW device yields efficient rise and decay times down to 38 and 53 μs, respectively, along with the responsivity of 6000 A W-1 and external quantum efficiency of 4.8 × 106 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors.
| S-EPMC6458123 | biostudies-literature
Project description:Efficient and reliable on-chip optical amplifiers and light sources would enable versatile integration of various active functionalities on the silicon platform. Although lasing on silicon has been demonstrated with semiconductors by using methods such as wafer bonding or molecular beam epitaxy, cost-effective mass production methods for CMOS-compatible active devices are still lacking. Here, we report ultra-high on-chip optical gain in erbium-based hybrid slot waveguides with a monolithic, CMOS-compatible and scalable atomic-layer deposition process. The unique layer-by-layer nature of atomic-layer deposition enables atomic scale engineering of the gain layer properties and straightforward integration with silicon integrated waveguides. We demonstrate up to 20.1?±?7.31?dB/cm and at least 52.4?±?13.8?dB/cm net modal and material gain per unit length, respectively, the highest performance achieved from erbium-based planar waveguides integrated on silicon. Our results show significant advances towards efficient on-chip amplification, opening a route to large-scale integration of various active functionalities on silicon.
| S-EPMC6347631 | biostudies-literature
Project description:The low-carbon steel (~0.12 wt%) with complete martensite structure, obtained by quenching, was cold rolled to get the high-strength steel sheets. Then, the mechanical properties of the sheets were measured at different angles to the rolling direction, and the microstructural evolution of low-carbon martensite with cold rolling reduction was observed. The results show that the hardness and the strength gradually increase with increasing rolling reduction, while the elongation and impact toughness obviously decrease. The strength of the sheets with the same rolling reduction are different at the angles of 0°, 45°, and 90° to the rolling direction. The tensile strength (elongation) along the rolling direction is higher than that in the other two directions, but the differences between them are not obvious. When the aging was performed at a low temperature, the strength of the initial martensite and deformed martensite increased with increasing aging time during the early stages of aging, followed by a gradual decrease with further aging. However, the elongation increases with increasing aging time. The change of hardness is consistent with that of strength for the cold-rolled martensite, while the hardness of the initial martensite decreases gradually with increasing aging time.
| S-EPMC7013394 | biostudies-literature
Project description:Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent properties, gallium nitride (GaN) and related alloys (e.g., AlxGa1-xN) are promising semiconductors for the next generation of high-power and high-frequency devices. However, there are still several technological concerns hindering the complete exploitation of these materials. As an example, high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures are inherently normally-on devices. However, normally-off operation is often desired in many power electronics applications. This review paper will give a brief overview on some scientific and technological aspects related to the current normally-off GaN HEMTs technology. A special focus will be put on the p-GaN gate and on the recessed gate hybrid metal insulator semiconductor high electron mobility transistor (MISHEMT), discussing the role of the metal on the p-GaN gate and of the insulator in the recessed MISHEMT region. Finally, the advantages and disadvantages in the processing and performances of the most common technological solutions for normally-off GaN transistors will be summarized.
| S-EPMC6567103 | biostudies-literature
Project description:Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects, and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here we explore 2D electron gas formed in GaN/AlGaN high-electron-mobility transistor heterostructures with an ultrathin barrier layer, key elements in current high-frequency and high-power electronics. Its electronic structure is accessed with angle-resolved photoelectron spectroscopy whose probing depth is pushed to a few nanometers using soft-X-ray synchrotron radiation. The experiment yields direct k-space images of the electronic structure fundamentals of this system-the Fermi surface, band dispersions and occupancy, and the Fourier composition of wavefunctions encoded in the k-dependent photoemission intensity. We discover significant planar anisotropy of the electron Fermi surface and effective mass connected with relaxation of the interfacial atomic positions, which translates into nonlinear (high-field) transport properties of the GaN/AlGaN heterostructures as an anisotropy of the saturation drift velocity of the 2D electrons.
| S-EPMC6041315 | biostudies-literature
Project description:Optical nanoantennas provide a promising pathway toward advanced manipulation of light waves, such as directional scattering, polarization conversion, and fluorescence enhancement. Although these functionalities were mainly studied for nanoantennas in free space or on homogeneous substrates, their integration with optical waveguides offers an important "wired" connection to other functional optical components. Taking advantage of the nanoantenna's versatility and unrivaled compactness, their imprinting onto optical waveguides would enable a marked enhancement of design freedom and integration density for optical on-chip devices. Several examples of this concept have been demonstrated recently. However, the important question of whether nanoantennas can fulfill functionalities for high-bit rate signal transmission without degradation, which is the core purpose of many integrated optical applications, has not yet been experimentally investigated. We introduce and investigate directional, polarization-selective, and mode-selective on-chip nanoantennas integrated with a silicon rib waveguide. We demonstrate that these nanoantennas can separate optical signals with different polarizations by coupling the different polarizations of light vertically to different waveguide modes propagating into opposite directions. As the central result of this work, we show the suitability of this concept for the control of optical signals with ASK (amplitude-shift keying) NRZ (nonreturn to zero) modulation [10 Gigabit/s (Gb/s)] without significant bit error rate impairments. Our results demonstrate that waveguide-integrated nanoantennas have the potential to be used as ultra-compact polarization-demultiplexing on-chip devices for high-bit rate telecommunication applications.
| S-EPMC5517110 | biostudies-other
Project description:A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.
| S-EPMC3716718 | biostudies-other