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Silicene nanomesh.

ABSTRACT: Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. The size of the band gap increases with the reduced W and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that the sub-10?nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature.

SUBMITTER: Pan F

PROVIDER: S-EPMC4649852 | biostudies-other | 2015

REPOSITORIES: biostudies-other

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Silicene nanomesh.

Pan Feng F Wang Yangyang Y Jiang Kaili K Ni Zeyuan Z Ma Jianhua J Zheng Jiaxin J Quhe Ruge R Shi Junjie J Yang Jinbo J Chen Changle C Lu Jing J

Scientific reports 20150313

Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. The size of the band gap increases with the reduced W and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that ...[more]

PMID: 25766672

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