Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Top-emitting quantum dots light-emitting devices employing microcontact printing with electricfield-independent emission.

ABSTRACT: Recent breakthroughs in quantum dot light-emitting devices (QD-LEDs) show their promise in the development of next-generation displays. However, the QD-LED with conventional ITO-based bottom emission structure is difficult to realize the high aperture ratio, electricfield-independent emission and flexible full-color displays. Hence, we demonstrate top-emitting QD-LEDs with dry microcontact printing quantum dot films. The top-emitting structure is proved to be able to accelerate the excitons radiative transition rate, then contributing to stable electroluminescent efficiency with a very low roll-off, and preventing spectra from shifting and broadening with the electric field increases. The results suggest potential routes towards creating high aperture ratio, wide color gamut, color-stable and flexible QD-LED displays.

SUBMITTER: Liu S

PROVIDER: S-EPMC4773764 | biostudies-other | 2016

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Similar Datasets

Double-Shelled InP/ZnMnS/ZnS Quantum Dots for Light-Emitting Devices.

Project description:Traditionally, ZnS or ZnSe is chosen as the shell material for InP quantum dots (QDs). However, for green or blue InP QDs, the ZnSe shell will form a type-II structure resulting in a redshift of the emission spectrum. Although the band gap of ZnS is wider, its lattice mismatch with InP is larger (∼7.7%), resulting in more defect states and lowered quantum yield (QY). To overcome the above problems, we introduced the intermediate ZnMnS layer in InP/ZnMnS/ZnS QDs. The wide band gap of the intermediate layer (3.7 eV) can confine the electrons and holes in the core completely, and the formation of the type-II structure is avoided. As a result, green InP-based QDs with QY up to 80% were obtained. By adjusting the halogen ratios of the ZnX2 precursor, the minimum and maximum emission peaks are 470 and 620 nm, respectively, covering the whole visible range. Finally, after optimizing the coating shell process, the maximum external quantum efficiency of QD light-emitting diodes fabricated from this InP-based green light QDs can reach 2.7%.

| S-EPMC6868586 | biostudies-literature

Light-emitting devices based on top-down fabricated GaAs quantum nanodisks.

Project description:Quantum dots photonic devices based on the III-V compound semiconductor technology offer low power consumption, temperature stability, and high-speed modulation. We fabricated GaAs nanodisks (NDs) of sub-20-nm diameters by a top-down process using a biotemplate and neutral beam etching (NBE). The GaAs NDs were embedded in an AlGaAs barrier regrown by metalorganic vapor phase epitaxy (MOVPE). The temperature dependence of photoluminescence emission energies and the transient behavior were strongly affected by the quantum confinement effects of the embedded NDs. Therefore, the quantum levels of the NDs may be tuned by controlling their dimensions. We combined NBE and MOVPE in a high-throughput process compatible with industrial production systems to produce GaAs NDs with tunable optical characteristics. ND light emitting diode exhibited a narrow spectral width of 38 nm of high-intensity emission as a result of small deviation of ND sizes and superior crystallographic quality of the etched GaAs/AlGaAs layer.

| S-EPMC4366859 | biostudies-other

Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices.

Project description:We demonstrate the first-ever surface modification of green CdSe/ZnS quantum dots (QDs) using bromide anions (Br-) in cetyl trimethylammonium bromide (CTAB). The Br- ions reduced the interparticle spacing between the QDs and induced an effective charge balance in QD light-emitting devices (QLEDs). The fabricated QLEDs exhibited efficient charge injection because of the reduced emission quenching effect and their enhanced thin film morphology. As a result, they exhibited a maximum luminance of 71,000?cd/m2 and an external current efficiency of 6.4?cd/A, both significantly better than those of their counterparts with oleic acid surface ligands. In addition, the lifetime of the Br- treated QD based QLEDs is significantly improved due to ionic passivation at the QDs surface.

| S-EPMC5043346 | biostudies-literature

Green Light-Emitting Devices Based on Perovskite CsPbBr<sub>3</sub> Quantum Dots.

Project description:In this paper, high quality green-emitting CsPbBr3 quantum dots (QDs) are successfully synthesized by hot-injection method. Different injection temperatures are tested to optimize the synthesis conditions. High brightness with the photoluminescence (PL) quantum yields (QYs) up to 90% and narrow size-distribution with the full width at half-maximum (FWHM) of 18.5 nm are obtained under the optimized conditions. Green light emitting diodes (LEDs) based on the CsPbBr3 QDs are successfully demonstrated by combining solution method with vapor deposition method. Composite films of poly[9,9-dioctylfluorene-co- N-[4-(3-methylpropyl)]-diphenylamine] (TFB) and bathocuproine (BCP) layers are chosen as the hole-transporting and the electron-transporting layers, respectively. The highly bright green QD-based light-emitting devices (QLEDs) showing maximum luminance up to 46,000 cd/m2 with a low turn on voltage of 2.3 V, and peak external quantum efficiency (EQE) of 5.7%, corresponding to 19.9 cd/A in luminance efficiency. These devices also show high color purity for electroluminescence (EL) with FWHM <20 nm, and no redshift and broadening with increasing voltage as well as a spectral match between PL and EL.

| S-EPMC6151352 | biostudies-literature

Liquid/solution-based microfluidic quantum dots light-emitting diodes for high-colour-purity light emission.

Project description:Organic light-emitting diodes (OLEDs) using a liquid organic semiconductor (LOS) are expected to provide extremely flexible displays. Recently, microfluidic OLEDs were developed to integrate and control a LOS in a device combined with microfluidic technology. However, LOS-based OLEDs show poor-colour-purity light emissions owing to their wide full width at half maximum (FWHM). Here we report liquid/solution-based microfluidic quantum dots light-emitting diodes (QLEDs) for high-colour-purity light emission. Microfluidic QLEDs contain liquid materials of LOS for a backlight and QDs solutions as luminophores. The microfluidic QLED exhibits red, green, and blue light emissions and achieves the highest light colour purity ever reported among LOS-based devices for green and red lights with narrow FWHMs of 26.2 nm and 25.0 nm, respectively. Additionally, the effect of the channel depth for the luminophore on the peak wavelength and FWHM is revealed. The developed device extends the capabilities of flexible microfluidic OLEDs-based and QDs-based displays.

| S-EPMC7471114 | biostudies-literature

Microcavity top-emission perovskite light-emitting diodes.

Project description:Light-emitting diodes (LEDs) based on perovskites show great potential in lighting and display applications. However, although perovskite films with high photoluminescence quantum efficiencies are commonly achieved, the efficiencies of perovskite LEDs are largely limited by the low light out-coupling efficiency. Here, we show that high-efficiency perovskite LEDs with a high external quantum efficiency of 20.2% and an ultrahigh radiant exitance up to 114.9 mW cm-2 can be achieved by employing the microcavity effect to enhance light extraction. The enhanced microcavity effect and light out-coupling efficiency are confirmed by the study of angle-dependent emission profiles. Our results show that both the optical and electrical properties of the device need to be optimized to achieve high-performance perovskite LEDs.

| S-EPMC7242415 | biostudies-literature

Top-emitting thermally activated delayed fluorescence organic light-emitting devices with weak light-matter coupling.

Project description:Resonance interaction between a molecular transition and a confined electromagnetic field can lead to weak or strong light-matter coupling. Considering the substantial exciton-phonon coupling in thermally activated delayed fluorescence (TADF) materials, it is thus interesting to explore whether weak light-matter coupling can be used to redistribute optical density of states and to change the rate of radiative decay. Here, we demonstrate that the emission distribution of TADF emitters can be reshaped and narrowed in a top-emitting organic light-emitting device (OLED) with a weakly coupled microcavity. The Purcell effect of weak microcavity is found to be different for TADF emitters with different molecular orientations. We demonstrate that radiative rates of the TADF emitters with vertical orientation can be substantial increased in weakly coupled organic microcavity. These observations can enhance external quantum efficiencies, reduce efficiency roll-off, and improve color-purities of TADF OLEDs, especially for emitters without highly horizontal orientation.

| S-EPMC8175730 | biostudies-literature

Al atomistic surface modulation on colloidal gradient quantum dots for high-brightness and stable light-emitting devices.

Project description:Quantum-dot (QD) light-emitting devices (QLEDs) have been attracting considerable attention owing to the unique properties of process, which can control the emission wavelength by controlling the particle size, narrow emission bandwidth, and high brightness. Although there have been rapid advances in terms of luminance and efficiency improvements, the long-term device stability is limited by the low chemical stability and photostability of the QDs against moisture and air. In this study, we report a simple method, which can for enhance the long-term stability of QLEDs against oxidation by inserting Al into the shells of CdSe/ZnS QDs. The Al coated on the ZnS shell of QDs act as a protective layer with Al2O3 owing to photo-oxidation, which can prevents the photodegradation of QD with prolonged irradiation and stabilize the device during a long-term operation. The QLEDs fabricated using CdSe/ZnS/Al QDs exhibited a maximum luminance of 57,580 cd/m2 and current efficiency of 5.8 cd/A, which are significantly more than 1.6 times greater than that of CdSe/ZnS QDs. Moreover, the lifetimes of the CdSe/ZnS/Al-QD-based QLEDs were significantly improved owing to the self-passivation at the QD surfaces.

| S-EPMC6478915 | biostudies-literature

Electroluminescent Warm White Light-Emitting Diodes Based on Passivation Enabled Bright Red Bandgap Emission Carbon Quantum Dots.

Project description:The development of efficient red bandgap emission carbon quantum dots (CQDs) for realizing high-performance electroluminescent warm white light-emitting diodes (warm-WLEDs) represents a grand challenge. Here, the synthesis of three red-emissive electron-donating group passivated CQDs (R-EGP-CQDs): R-EGP-CQDs-NMe2, -NEt2, and -NPr2 is reported. The R-EGP-CQDs, well soluble in common organic solvents, display bright red bandgap emission at 637, 642, and 645 nm, respectively, reaching the highest photoluminescence quantum yield (QY) up to 86.0% in ethanol. Theoretical investigations reveal that the red bandgap emission originates from the rigid π-conjugated skeleton structure, and the -NMe2, -NEt2, and -NPr2 passivation plays a key role in inducing charge transfer excited state in the π-conjugated structure to afford the high QY. Solution-processed electroluminescent warm-WLEDs based on the R-EGP-CQDs-NMe2, -NEt2, and -NPr2 display voltage-stable warm white spectra with a maximum luminance of 5248-5909 cd m-2 and a current efficiency of 3.65-3.85 cd A-1. The warm-WLEDs also show good long-term operational stability (L/L 0 > 80% after 50 h operation, L 0: 1000 cd m-2). The electron-donating group passivation strategy opens a new avenue to realizing efficient red bandgap emission CQDs and developing high-performance electroluminescent warm-WLEDs.

| S-EPMC6662328 | biostudies-literature

Yb:MoO3/Ag/MoO3 Multilayer Transparent Top Cathode for Top-Emitting Green Quantum Dot Light-Emitting Diodes.

Project description:In this study, we report on the application of a dielectric/ultra-thin metal/dielectric (DMD) multilayer consisting of ytterbium (Yb)-doped molybdenum oxide (MoO3)/silver (Ag)/MoO3 stacked as the transparent cathode in top-emitting green quantum dot light-emitting diodes (QLED). By optimizing the Yb doping ratio, we have highly improved the electron injection ability from 0.01 to 0.35. In addition, the dielectric/ultra-thin metal/dielectric (DMD) cathode also shows a low sheet resistance of only 12.2 ?/sq, which is superior to the resistance of the commercially-available indium tin oxide (ITO) electrode (~15 ?/sq). The DMD multilayer exhibits a maximum transmittance of 75% and an average transmittance of 70% over the visible range of 400-700 nm. The optimized DMD-based G-QLED has a smaller current leakage at low driving voltage. The optimized DMD-based G-QLED enhances the current density than that of G-QLED with indium zinc oxide (IZO) as a cathode. The fabricated DMD-based G-QLED shows a low turn-on voltage of 2.2 V, a high current efficiency of 38 cd/A, and external quantum efficiency of 9.8. These findings support the fabricated DMD multilayer as a promising cathode for transparent top-emitting diodes.

| S-EPMC7221779 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data