Browse
Submit Data
Databases
API
Help

Dataset Information

28 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices.

ABSTRACT: Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers.

SUBMITTER: Lu J

PROVIDER: S-EPMC4867586 | biostudies-other | 2016

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Similar Datasets

Hexagonal GaN nanorod-based photonic crystal slab as simultaneous yellow broadband reflector and blue emitter for phosphor-conversion white light emitting devices.

Project description:We report a hexagonal GaN nanorod-based two-dimensional photonic crystal (PhC) slab for phosphor-conversion white light emitting devices analyzed by three-dimensional finite-difference time-domain simulation; this slab has a broad reflection band at yellow wavelength with low Fabry-Pérot background at normal incidence. For practical use as a wavelength-selective reflector, a buffer layer under the PhC slab is employed to sustain the nanorods in the PhC slab. However, we observed that the buffer layer placed below the slab destroys the broad reflection band due to evanescent coupling of electromagnetic field in the slab and the buffer layer. By introducing small-sized base pillars between the slab and the buffer layer, we could decouple the interaction between the slab and the buffer layer and maintain the broad reflection band without any unexpected dips. Since this GaN nanorod-based PhC slab is designed for practical light emitting devices by considering dielectric and transparent conducting layers, this structure is directly applicable for developing hybrid white light emitting devices having both an (active) blue-color-emitting nanorod emitters and a (passive) normal reflector of phosphor emission.

| S-EPMC6962447 | biostudies-literature

Self-Aligned Hierarchical ZnO Nanorod/NiO Nanosheet Arrays for High Photon Extraction Efficiency of GaN-Based Photonic Emitter.

Project description:Advancements in nanotechnology have facilitated the increased use of ZnO nanostructures. In particular, hierarchical and core-shell nanostructures, providing a graded refractive index change, have recently been applied to enhance the photon extraction efficiency of photonic emitters. In this study, we demonstrate self-aligned hierarchical ZnO nanorod (ZNR)/NiO nanosheet arrays on a conventional photonic emitter (C-emitter) with a wavelength of 430 nm. These hierarchical nanostructures were synthesized through a two-step hydrothermal process at low temperature, and their optical output power was approximately 17% higher than that of ZNR arrays on a C-emitter and two times higher than that of a C-emitter. These results are due to the graded index change in refractive index from the GaN layer inside the device toward the outside as well as decreases in the total internal reflection and Fresnel reflection of the photonic emitter.

| S-EPMC7231008 | biostudies-literature

Nitrogen-Implanted ZnO Nanorod Arrays for Visible Light Photocatalytic Degradation of a Pharmaceutical Drug Acetaminophen.

Project description:The present study focuses on the effects of nitrogen (N) ion implantation in vertically aligned ZnO nanorod arrays (NRAs) and the photocatalytic degradation of acetaminophen. The X-ray diffraction of these NRAs exhibit a wurtzite structure with a predominant (002) diffraction peak that shifts slightly after N-ion implantation. The field emission scanning electron microscopic images of as-prepared NRAs show a length of ∼4 μm and diameter of ∼150 nm. UV-visible spectroscopy reveals that the band gap of pristine ZnO NRAs decreases from 3.2 to 2.18 eV after N-ion implantation. Under visible irradiation, the N-ion-implanted ZnO catalyst exhibits significant enhancement of the photocatalytic degradation of acetaminophen from 60.0 to 98.46% for 120 min.

| S-EPMC6682035 | biostudies-literature

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes.

Project description:This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n-ZnO/p-GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The origins of the light emission for these LEDs annealed at various temperatures were studied using measurements of electrical property, photoluminescence, and Auger electron spectroscopy (AES) depth profiles. A blue-violet emission located at 430 nm was associated with intrinsic transitions between the bandgap of n-ZnO and p-GaN, the green-yellow emission at 550 nm mainly originating from the deep-level transitions of native defects in the n-ZnO and p-GaN surfaces, and the red emission at 610 nm emerging from the Ga-O interlayer due to interdiffusion at the n-ZnO/p-GaN interface. The above-mentioned emissions also supported the EL spectra of LEDs annealed at 700 °C under air, nitrogen, and oxygen atmospheres, respectively.

| S-EPMC5458876 | biostudies-other

Construction of 1D Heterostructure NiCo@C/ZnO Nanorod with Enhanced Microwave Absorption.

Project description:Layered double hydroxides (LDHs) have a special structure and atom composition, which are expected to be an excellent electromagnetic wave (EMW) absorber. However, it is still a problem that obtaining excellent EMW-absorbing materials from LDHs. Herein, we designed heterostructure NiCo-LDHs@ZnO nanorod and then subsequent heat treating to derive NiCo@C/ZnO composites. Finally, with the synergy of excellent dielectric loss and magnetic loss, an outstanding absorption performance could be achieved with the reflection loss of - 60.97 dB at the matching thickness of 2.3 mm, and the widest absorption bandwidth of 6.08 GHz was realized at 2.0 mm. Moreover, this research work provides a reference for the development and utilization of LDHs materials in the field of microwave absorption materials and can also provide ideas for the design of layered structural absorbers.

| S-EPMC8368508 | biostudies-literature

Hydrothermally Grown In-doped ZnO Nanorods on p-GaN Films for Color-tunable Heterojunction Light-emitting-diodes.

Project description:The incorporation of doping elements in ZnO nanostructures plays an important role in adjusting the optical and electrical properties in optoelectronic devices. In the present study, we fabricated 1-D ZnO nanorods (NRs) doped with different In contents (0% ~ 5%) on p-GaN films using a facile hydrothermal method, and investigated the effect of the In doping on the morphology and electronic structure of the NRs and the electrical and optical performances of the n-ZnO NRs/p-GaN heterojunction light emitting diodes (LEDs). As the In content increased, the size (diameter and length) of the NRs increased, and the electrical performance of the LEDs improved. From the electroluminescence (EL) spectra, it was found that the broad green-yellow-orange emission band significantly increased with increasing In content due to the increased defect states (oxygen vacancies) in the ZnO NRs, and consequently, the superposition of the emission bands centered at 415 nm and 570 nm led to the generation of white-light. These results suggest that In doping is an effective way to tailor the morphology and the optical, electronic, and electrical properties of ZnO NRs, as well as the EL emission property of heterojunction LEDs.

| S-EPMC4437377 | biostudies-literature

Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth.

Project description:Improvements in the overall efficiency and significant reduction in the efficiency droop are observed in three-dimensional (3D) GaN truncated pyramid structures fabricated with air void and a SiO2 layer. This 3D structure was fabricated using a self-aligned twofold epitaxial lateral overgrowth technique, which improved both the internal quantum efficiency and the light extraction efficiency. In addition, a reduced leakage current was observed due to the effective suppression of threading dislocations. While this study focuses primarily on the blue emission wavelength region, this approach can also be applied to overcome the efficiency degradation problem in the ultraviolet, green, and red emission regions.

| S-EPMC5575063 | biostudies-literature

Highly transparent and UV-resistant superhydrophobic SiO(2)-coated ZnO nanorod arrays.

Project description:Highly transparent and UV-resistant superhydrophobic arrays of SiO2-coated ZnO nanorods are prepared in a sequence of low-temperature (<150 °C) steps on both glass and thin sheets of PET (2 × 2 in.(2)), and the superhydrophobic nanocomposite is shown to have minimal impact on solar cell device performance under AM1.5G illumination. Flexible plastics can serve as front cell and backing materials in the manufacture of flexible displays and solar cells.

| S-EPMC3985694 | biostudies-literature

Electrically and optically readable light emitting memories.

Project description:Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory performance. To solve this problem, here we demonstrate the first attempt of light-emitting memory (LEM) that uses SiO2 as the resistive switching material in tandem with graphene-insulator-semiconductor (GIS) light-emitting diode (LED). By utilizing the excellent properties of graphene, such as high conductivity, high robustness and high transparency, our proposed LEM enables data communication via electronic and optical signals simultaneously. Both the bistable light-emission state and the resistance switching properties can be attributed to the conducting filament mechanism. Moreover, on the analysis of current-voltage characteristics, we further confirm that the electroluminescence signal originates from the carrier tunneling, which is quite different from the standard p-n junction model. We stress here that the newly developed LEM device possesses a simple structure with mature fabrication processes, which integrates advantages of all composed materials and can be extended to many other material systems. It should be able to attract academic interest as well as stimulate industrial application.

| S-EPMC4044638 | biostudies-other

Top-emitting thermally activated delayed fluorescence organic light-emitting devices with weak light-matter coupling.

Project description:Resonance interaction between a molecular transition and a confined electromagnetic field can lead to weak or strong light-matter coupling. Considering the substantial exciton-phonon coupling in thermally activated delayed fluorescence (TADF) materials, it is thus interesting to explore whether weak light-matter coupling can be used to redistribute optical density of states and to change the rate of radiative decay. Here, we demonstrate that the emission distribution of TADF emitters can be reshaped and narrowed in a top-emitting organic light-emitting device (OLED) with a weakly coupled microcavity. The Purcell effect of weak microcavity is found to be different for TADF emitters with different molecular orientations. We demonstrate that radiative rates of the TADF emitters with vertical orientation can be substantial increased in weakly coupled organic microcavity. These observations can enhance external quantum efficiencies, reduce efficiency roll-off, and improve color-purities of TADF OLEDs, especially for emitters without highly horizontal orientation.

| S-EPMC8175730 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data