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Microwave platform as a valuable tool for characterization of nanophotonic devices.

ABSTRACT: The rich potential of the microwave experiments for characterization and optimization of optical devices is discussed. While the control of the light fields together with their spatial mapping at the nanoscale is still laborious and not always clear, the microwave setup allows to measure both amplitude and phase of initially determined magnetic and electric field components without significant perturbation of the near-field. As an example, the electromagnetic properties of an add-drop filter, which became a well-known workhorse of the photonics, is experimentally studied with the aid of transmission spectroscopy measurements in optical and microwave ranges and through direct mapping of the near fields at microwave frequencies. We demonstrate that the microwave experiments provide a unique platform for the comprehensive studies of electromagnetic properties of micro- and nanophotonic devices, and allow to obtain data which are hardly acquirable by conventional optical methods.

SUBMITTER: Shishkin I

PROVIDER: S-EPMC5069494 | biostudies-other | 2016 Oct

REPOSITORIES: biostudies-other

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Microwave platform as a valuable tool for characterization of nanophotonic devices.

Shishkin Ivan I Baranov Dmitry D Slobozhanyuk Alexey A Filonov Dmitry D Lukashenko Stanislav S Samusev Anton A Belov Pavel P

Scientific reports 20161019

The rich potential of the microwave experiments for characterization and optimization of optical devices is discussed. While the control of the light fields together with their spatial mapping at the nanoscale is still laborious and not always clear, the microwave setup allows to measure both amplitude and phase of initially determined magnetic and electric field components without significant perturbation of the near-field. As an example, the electromagnetic properties of an add-drop filter, wh ...[more]

PMID: 27759058

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Project description:Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their nonradiative states, aiming at highly efficient III-V sub-micrometer active devices and circuits. Despite many advances, the poor reproducibility and short-term passivation effect of chemical treatments, such as sulfidation and nitridation, requires the use of protective encapsulation methods, not only to protect the surface, but also to provide electrical isolation for device manufacturing. There is still a controversial debate on which combination of chemical treatment and capping dielectric layer can best reproducibly protect the crystal surface of III-V materials while being compatible with readily available semiconductor-foundry plasma deposition methods. This work reports on a systematic experimental study on the role of sulfide ammonium chemical treatment followed by dielectric coating (either silicon oxide or nitride) in the passivation effect of GaAs/AlGaAs nanopillars. Our results conclusively show that, under ambient conditions, the best surface passivation is achieved using ammonium sulfide followed by encapsulation with a thin layer of silicon nitride by low-frequency plasma-enhanced chemical deposition. Here, the sulfurized GaAs surfaces, high level of hydrogen ions, and low-frequency (380 kHz) excitation plasma that enable intense bombardment of hydrogen, all seem to provide a combined active role in the passivation mechanism of the pillars by reducing the surface states. As a result, we observe up to a 29-fold increase of the photoluminescence (PL) integrated intensity for the best samples as compared to untreated nanopillars. X-ray photoelectron spectroscopy analysis confirms the best treatments show remarkable removal of gallium and arsenic native oxides. Time-resolved micro-PL measurements display nanosecond lifetimes resulting in a record-low surface recombination velocity of ∼1.1 × 104 cm s-1 for dry-etched GaAs nanopillars. We achieve robust, stable, and long-term passivated nanopillar surfaces, which creates expectations for remarkable high internal quantum efficiency (IQE > 0.5) in nanoscale light-emitting diodes. The enhanced performance paves the way to many other nanostructures and devices such as miniature resonators, lasers, photodetectors, and solar cells, opening remarkable prospects for GaAs active nanophotonic devices.

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Microwave platform as a valuable tool for characterization of nanophotonic devices.

Publications

Microwave platform as a valuable tool for characterization of nanophotonic devices.

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