Browse
Submit Data
Databases
API
Help

Dataset Information

12 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO₂ Thin-Film.

ABSTRACT: The effect of intrinsic stress on the structure and physical properties of silicon-tin-oxide (STO) films have been investigated. Since a state of tensile stress is available in as-deposited films, the value of stress can be exponentially enhanced when the annealing temperature is increased. The tensile stress is able to not only suppress the crystallization and widen the optical band gap of STO films, but also reduce defects of STO films. In this report, the good electrical performance of STO thin-film transistors (TFTs) can be obtained when annealing temperature is 450 °C. This includes a value of saturation mobility that can be reached at 6.7 cm²/Vs, a ratio of Ion/Ioff as 7.34 × 107, a steep sub-threshold swing at 0.625 V/decade, and a low trap density of 7.96 × 1011 eV-1·cm-2, respectively.

SUBMITTER: Ning H

PROVIDER: S-EPMC5344632 | biostudies-other | 2017 Jan

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Similar Datasets

Structural and optical properties of amorphous Si-Ge-Te thin films prepared by combinatorial sputtering.

Project description:The lack of order in amorphous chalcogenides offers them novel properties but also adds increased challenges in the discovery and design of advanced functional materials. The amorphous compositions in the Si-Ge-Te system are of interest for many applications such as optical data storage, optical sensors and Ovonic threshold switches. But an extended exploration of this system is still missing. In this study, magnetron co-sputtering is used for the combinatorial synthesis of thin film libraries, outside the glass formation domain. Compositional, structural and optical properties are investigated and discussed in the framework of topological constraint theory. The materials in the library are classified as stressed-rigid amorphous networks. The bandgap is heavily influenced by the Te content while the near-IR refractive index dependence on Ge concentration shows a minimum, which could be exploited in applications. A transition from a disordered to a more ordered amorphous network at 60 at% Te, is observed. The thermal stability study shows that the formed crystalline phases are dictated by the concentration of Ge and Te. New amorphous compositions in the Si-Ge-Te system were found and their properties explored, thus enabling an informed and rapid material selection and design for applications.

| S-EPMC8175571 | biostudies-literature

Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications.

Project description:The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec-1, increased on/off current ratio of ~8 × 10?, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.

| S-EPMC6337128 | biostudies-literature

Probing of 2 dimensional confinement-induced structural transitions in amorphous oxide thin film.

Project description:Whereas the atomic structure of surface of crystals is known to be distinct from that of bulk, experimental evidence for thickness-induced structural transitions in amorphous oxides is lacking. We report the NMR result for amorphous alumina with varying thickness from bulk up to 5 nm, revealing the nature of structural transitions near amorphous oxide surfaces/interfaces. The coordination environments in the confined amorphous alumina thin film are distinct from those of bulk, highlighted by a decrease in the fractions of high-energy clusters (and thus the degree of disorder) with thickness. The result implies that a wide range of variations in amorphous structures may be identified by controlling its dimensionality.

| S-EPMC3935193 | biostudies-literature

Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure.

Project description:Four years׳ behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic (PV) modules installed in a relatively dry and sunny inland site with a Continental-Mediterranean climate (in the city of Jaén, Spain) are presented in this article. The shared data contributes to clarify how the Light Induced Degradation (LID) impacts the output power generated by the PV array, especially in the first days of exposure under outdoor conditions. Furthermore, a valuable methodology is provided in this data article permitting the assessment of the degradation rate and the stabilization period of the PV modules. Further discussions and interpretations concerning the data shared in this article can be found in the research paper "Characterization of degradation and evaluation of model parameters of amorphous silicon photovoltaic modules under outdoor long term exposure" (Kichou et al., 2016) [1].

| S-EPMC4781922 | biostudies-literature

Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiOx Passivation Layer.

Project description:In this research, a passivated methodology was proposed for achieving good electrical characteristics for back-channel-etch (BCE) typed amorphous Si-Sn-O thin film transistors (a-STO TFTs). This methodology implied that the thermal annealing (i.e., pre-annealing) should be carried out before deposition of a SiOx passivation layer. The pre-annealing played an important role in affecting device performance, which did get rid of the contamination of the lithography process. Simultaneously, the acceptor-like sub-gap density of states (DOS) of devices was extracted for further understanding the reason for improving device performance. It found that the SiOx layer could reduce DOS of the device and successfully protect the device from surroundings. Finally, a-STO TFT applied with this passivated methodology could possess good electrical properties including a saturation mobility of 4.2 ± 0.2 cm²/V s, a low threshold voltage of 0.00 V, a large on/off current ratio of 6.94 × 10?, and a steep subthreshold swing of 0.23 V/decade. The threshold voltage slightly shifted under bias stresses and recovered itself to its initial state without any annealing procedure, which was attributed to the charge trapping in the bulk dielectric layers or interface. The results of this study indicate that a-STO TFT could be a robust candidate for realizing a large-size and high-resolution display.

| S-EPMC6119873 | biostudies-other

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.

Project description:Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm²/(V?s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm²/(V?s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.

| S-EPMC5503323 | biostudies-literature

Thin Film of Amorphous Zinc Hydroxide Semiconductor for Optical Devices with an Energy-Efficient Beneficial Coating by Metal Organic Decomposition Process.

Project description:An effective metal oxide coating with solution processes by the metal organic decomposition method as deposited at room temperature (RT) poses great challenge. In this study, we report the characterization and evaluation of the semiconductor properties of a zinc hydroxide thin film with RT just as deposition by solution coating method. The films worked well as an inter-layer of the organic photovoltaic cell and optimized the film thickness condition with chemical and physical properties. As a result, we achieved a power conversion efficiency performance level, which was almost similar to that in the cells used after calcination in the crystal ZnO inter-layer. The presented process without any additional decomposition energy is expected to make a significant contribution to the realization of a flexible and cost-effective solution process for device fabrication.

| S-EPMC6054676 | biostudies-literature

Understanding light harvesting in radial junction amorphous silicon thin film solar cells.

Project description:The radial junction (RJ) architecture has proven beneficial for the design of a new generation of high performance thin film photovoltaics. We herein carry out a comprehensive modeling of the light in-coupling, propagation and absorption profile within RJ thin film cells based on an accurate set of material properties extracted from spectroscopic ellipsometry measurements. This has enabled us to understand and evaluate the impact of varying several key parameters on the light harvesting in radially formed thin film solar cells. We found that the resonance mode absorption and antenna-like light in-coupling behavior in the RJ cell cavity can lead to a unique absorption distribution in the absorber that is very different from the situation expected in a planar thin film cell, and that has to be taken into account in the design of high performance RJ thin film solar cells. When compared to the experimental EQE response of real RJ solar cells, this modeling also provides an insightful and powerful tool to resolve the wavelength-dependent contributions arising from individual RJ units and/or from strong light trapping due to the presence of the RJ cell array.

| S-EPMC3950579 | biostudies-literature

Localized Tail States and Electron Mobility in Amorphous ZnON Thin Film Transistors.

Project description:The density of localized tail states in amorphous ZnON (a-ZnON) thin film transistors (TFTs) is deduced from the measured current-voltage characteristics. The extracted values of tail state density at the conduction band minima (N(tc)) and its characteristic energy (kT(t)) are about 2 × 10(20) cm(-3)eV(-1) and 29 meV, respectively, suggesting trap-limited conduction prevails at room temperature. Based on trap-limited conduction theory where these tail state parameters are considered, electron mobility is accurately retrieved using a self-consistent extraction method along with the scaling factor '1/(α + 1)' associated with trapping events at the localized tail states. Additionally, it is found that defects, e.g. oxygen and/or nitrogen vacancies, can be ionized under illumination with hv ≫ E(g), leading to very mild persistent photoconductivity (PPC) in a-ZnON TFTs.

| S-EPMC4548246 | biostudies-literature

Electrodeposition of amorphous molybdenum sulfide thin film for electrochemical hydrogen evolution reaction.

Project description:Amorphous molybdenum sulfide (MoSx) is a highly active noble-metal-free electrocatalysts for the hydrogen evolution reaction (HER). The MoSx was prepared by electrochemical deposition at room temperature. Low-cost precursors of Mo and S were adopted to synthesize thiomolybdates solution as the electrolyte. It replaces the expensive (NH)2MoS4 and avoid the poison gas (H2S) to generate or employ. The (MoO2S2)2-, (MoOS3)2- and (MoS4)2- ions were determined by UV-VIS spectroscopy. The electrodeposition of MoSx was confirmed with XRD, XPS and SEM. The electrocatalyst activity was measured by polarization curve. The electrolyte contained (MoO2S2)2- ion and (MoOS3)2- ion electrodeposit the MoSx thin film displays a relatively high activity for HER with low overpotential of 211 mV at a current density of 10 mA cm-2, a relatively high current density of 21.03 mA cm-2 at η = 250 mV, a small Tafel slope of 55 mV dec-1. The added sodium dodecyl sulfate (SDS) can efficient improve the stability of the MoSx film catalyst.

| S-EPMC6661953 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data