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High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.

ABSTRACT: Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm²/(V?s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm²/(V?s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.

SUBMITTER: Zhang J

PROVIDER: S-EPMC5503323 | biostudies-literature | 2017 Mar

REPOSITORIES: biostudies-literature

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High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.

Zhang Jiawei J Yang Jia J Li Yunpeng Y Wilson Joshua J Ma Xiaochen X Xin Qian Q Song Aimin A

Materials (Basel, Switzerland) 20170321 3

Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm²/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm²/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a ...[more]

PMID: 28772679

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High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.

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High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.

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