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Single Layer Broadband Anti-Reflective Coatings for Plastic Substrates Produced by Full Wafer and Roll-to-Roll Step-and-Flash Nano-Imprint Lithography.

ABSTRACT: Anti-reflective coatings (ARCs) are used to lower the reflection of light on the surface of a substrate. Here, we demonstrate that the two main drawbacks of moth eye-structured ARCs-i.e., the lack of suitable coating materials and a process for large area, high volume applications-can be largely eliminated, paving the way for cost-efficient and large-scale production of durable moth eye-structured ARCs on polymer substrates. We prepared moth eye coatings on polymethylmethacrylate (PMMA) and polycarbonate using wafer-by-wafer step-and-flash nano-imprint lithography (NIL). The reduction in reflection in the visible field achieved with these coatings was 3.5% and 4.0%, respectively. The adhesion of the coating to both substrates was good. The moth eye coating on PMMA demonstrated good performance in three prototypical accelerated ageing tests. The pencil hardness of the moth eye coatings on both substrates was <4B, which is less than required for most applications and needs further optimization. Additionally, we developed a roll-to-roll UV NIL pilot scale process and produced moth eye coatings on polyethylene terephthalate (PET) at line speeds up to two meters per minute. The resulting coatings showed a good replication of the moth eye structures and, consequently, a lowering in reflection of the coated PET of 3.0%.

SUBMITTER: Burghoorn M

PROVIDER: S-EPMC5452668 | biostudies-other | 2013 Aug

REPOSITORIES: biostudies-other

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Project description:Complex nanoshaped structures (nanoshape structures here are defined as shapes enabled by sharp corners with radius of curvature <5 nm) have been shown to enable emerging nanoscale applications in energy, electronics, optics, and medicine. This nanoshaped fabrication at high throughput is well beyond the capabilities of advanced optical lithography. While the highest-resolution e-beam processes (Gaussian beam tools with non-chemically amplified resists) can achieve <5 nm resolution, this is only available at very low throughputs. Large-area e-beam processes, needed for photomasks and imprint templates, are limited to ~18 nm half-pitch lines and spaces and ~20 nm half-pitch hole patterns. Using nanoimprint lithography, we have previously demonstrated the ability to fabricate precise diamond-like nanoshapes with ~3 nm radius corners over large areas. An exemplary shaped silicon nanowire ultracapacitor device was fabricated with these nanoshaped structures, wherein the half-pitch was 100 nm. The device significantly exceeded standard nanowire capacitor performance (by 90%) due to relative increase in surface area per unit projected area, enabled by the nanoshape. Going beyond the previous work, in this paper we explore the scaling of these nanoshaped structures to 10 nm half-pitch and below. At these scales a new "shape retention" resolution limit is observed due to polymer relaxation in imprint resists, which cannot be predicted with a linear elastic continuum model. An all-atom molecular dynamics model of the nanoshape structure was developed here to study this shape retention phenomenon and accurately predict the polymer relaxation. The atomistic framework is an essential modeling and design tool to extend the capability of imprint lithography to sub-10 nm nanoshapes. This framework has been used here to propose process refinements that maximize shape retention, and design template assist features (design for nanoshape retention) to achieve targeted nanoshapes.

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Single Layer Broadband Anti-Reflective Coatings for Plastic Substrates Produced by Full Wafer and Roll-to-Roll Step-and-Flash Nano-Imprint Lithography.

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