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Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors.

ABSTRACT: A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) treatment of the AlOx was employed in order to realize high-performance (>0.4 cm²/Vs saturation mobility) and low-operation-voltage (<5 V) diketopyrrolopyrrole (DPP)-based OTFTs on an ultra-thin polyimide film (3-μm thick). Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

SUBMITTER: Kim J

PROVIDER: S-EPMC5455382 | biostudies-other | 2015 Oct

REPOSITORIES: biostudies-other

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Project description:Large-scale commercial synthesis of bulk-heterojunction (BHJ) solar cell materials is very challenging and both time and energy consuming. Synthesis of π-conjugated polymers (CPs) with uniform batch-to-batch molecular weight and low dispersity is a key requirement for better reproducibility of high-efficiency polymer solar cells. Herein, a conjugated polymer (CP) PTB7-Th, well known for its high performance, has been synthesized with high molecular weight and low dispersity in a closed microwave reactor. The microwave reaction procedure is known to be more controlled and consumes less energy. The precursors were strategically reacted for different reaction time durations to obtain the optimum molecular weight. All different CPs were well characterized using 1H NMR, gel permeation chromatography (GPC), UV-vis, photoluminescence (PL), electron spin resonance (ESR), and Raman spectroscopy, whereas the film morphology was extensively studied via atomic force microscopy (AFM) and grazing incidence X-ray diffraction (GIXRD) techniques. The effect of molecular weight on a conventional BHJ solar cell with PC71BM acceptor was investigated to derive systematic structure-property relationships. The CP obtained after 35 min of reaction time and integrated into BHJ devices under ambient conditions provided the best performance with a power conversion efficiency (PCE) of 8.09%, which was quite similar to the results of CPs synthesized via a thermal route. An enhanced PCE of 8.47% was obtained for the optimized polymer (35 min microwave reaction product) when device fabrication was carried out inside a glovebox. The organic thin-film transistor (OTFT) device with the microwave-synthesized CP displayed better hole mobility (0.137 cm2 V-1 s-1) as compared to that with the thermally synthesized CP. This study also proved that the device stability and reproducibility of the microwave-synthesized CP were much better and more consistent than those of the thermally developed CP.

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Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors.

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