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Point contact resistive switching memory based on self-formed interface of Al/ITO.

ABSTRACT: Point contact resistive switching random access memory (RRAM) has been achieved by directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room-temperature deposited Al/ITO shows an asymmetrical bipolar resistive switching (BRS) behavior after a process of initialization which induces a stable high resistive state (HRS). It might be caused by the in-situ formation of an ultra-thin layer (≈4 nm) at the interface. By comparison, the Al/ITO device after vacuum annealed exhibits typical symmetrical BRS without an initiation or electroforming process. This can be ascribed to the ex-situ thickening of the interfacial layer (≈9.2 nm) to achieve the stable HRS after heat treatment. This work suggests that the self-formed interface of active Al electrode/ITO would provide the simplest geometry to construct RRAM.

SUBMITTER: Li Q

PROVIDER: S-EPMC4935939 | biostudies-literature | 2016 Jul

REPOSITORIES: biostudies-literature

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Point contact resistive switching memory based on self-formed interface of Al/ITO.

Li Qiuhong Q Qiu Linjun L Wei Xianhua X Dai Bo B Zeng Huizhong H

Scientific reports 20160707

Point contact resistive switching random access memory (RRAM) has been achieved by directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room-temperature deposited Al/ITO shows an asymmetrical bipolar resistive switching (BRS) behavior after a process of initialization which induces a stable high resistive state (HRS). It might be caused by the in-situ formation of an ultra-thin layer (≈4 nm) at the interface. By comparison, the Al/ITO device after vacuum annealed e ...[more]

PMID: 27383005

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