Ontology highlight
ABSTRACT:
SUBMITTER: Lin YD
PROVIDER: S-EPMC5469721 | biostudies-other | 2017 Dec
REPOSITORIES: biostudies-other
Lin Yu-De YD Chen Pang-Shiu PS Lee Heng-Yuan HY Chen Yu-Sheng YS Rahaman Sk Ziaur SZ Tsai Kan-Hsueh KH Hsu Chien-Hua CH Chen Wei-Su WS Wang Pei-Hua PH King Ya-Chin YC Lin Chrong Jung CJ
Nanoscale research letters 20170613 1
A retention behavior model for self-rectifying TaO/HfO <sub>x</sub> - and TaO/AlO <sub>x</sub> -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS, because the LRS during the SET process is limited by the internal resistor layer. However, if TaO/AlO <sub>x</sub> elements are stacked in layers, the LRS retention can be improved. The L ...[more]