Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

ABSTRACT: We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows a high mobility of 39.4 cm 2 ·V - 1 ·s - 1 a turn-on voltage of -0.8 V and a low subthreshold swing of 0.47 V/decade. Cu diffusion is suppressed because pre-annealing can protect a-IGZO from damage during the electrode sputtering and reduce the copper diffusion paths by making film denser. Due to the interaction of Cr with a-IGZO, the carrier concentration of a-IGZO, which is responsible for high mobility, rises.

SUBMITTER: Hu S

PROVIDER: S-EPMC5509041 | biostudies-other | 2016 Jul

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Similar Datasets

Geometry Control of Source/Drain Electrodes in Organic Field-Effect Transistors by Electrohydrodynamic Inkjet Printing.

Project description:In this work we study the influence of dielectric surface and process parameters on the geometry and electrical properties of silver electrodes obtained by electrohydrodynamic inkjet printing. The cross-section and thickness of printed silver tracks are optimized to achieve a high conductivity. Silver overprints with cross-section larger than 4 μm2 and thickness larger than 90 nm exhibit the lowest resistivity. To fabricate electrodes in the desired geometry, a sufficient volume of ink is distributed on the surface by applying appropriate voltage amplitude. Single and multilayer overprints are incorporated as bottom contacts in bottom gate organic field-effect transistors (OFETs) with a semiconducting polymer as active layer. The multilayer electrodes result in significantly higher electrical parameters than single layer contacts, confirming the importance of a careful design of the printed tracks for reliable device performance. The results provide important design guidelines for precise fabrication of electrodes in electronic devices by electrohydrodynamic inkjet printing.

| S-EPMC7663849 | biostudies-literature

Effect of Source/Drain Electrodes on the Electrical Properties of Silicon?Tin Oxide Thin-Film Transistors.

Project description:Ultra-high definition displays have become a trend for the current flat plane displays. In this study, the contact properties of amorphous silicon?tin oxide thin-film transistors (a-STO TFTs) employed with source/drain (S/D) electrodes were analyzed. Ohmic contact with a good device performance was achieved when a-STO was matched with indium-tin-oxide (ITO) or Mo electrodes. The acceptor-like densities of trap states (DOS) of a-STO TFTs were further investigated by using low-frequency capacitance?voltage (C?V) characteristics to understand the impact of the electrode on the device performance. The reason of the distinct electrical performances of the devices with ITO and Mo contacts was attributed to different DOS caused by the generation of local defect states near the electrodes, which distorted the electric field distribution and formed an electrical potential barrier hindering the flow of electrons. It is of significant importance for circuit designers to design reliable integrated circuits with SnO?-based devices applied in flat panel displays.

| S-EPMC5977307 | biostudies-literature

Asymmetric Injection in Organic Transistors via Direct SAM Functionalization of Source and Drain Electrodes.

Project description:The fabrication of organic optoelectronic devices integrating asymmetric electrodes enables optimal charge injection/extraction at each individual metal/semiconductor interface. This is key for applications in devices such as solar cells, light-emitting transistors, photodetectors, inverters, and sensors. Here, we describe a new method for the asymmetric functionalization of gold electrodes with different thiolated molecules as a viable route to obtain two electrodes with drastically different work function values. The process involves an ad hoc design of electrode geometry and the use of a polymeric mask to protect one electrode during the first functionalization step. Photoelectron yield ambient spectroscopy and X-ray photoelectron spectrometry were used to characterize the energetic properties and the composition of the asymmetrically functionalized electrodes. Finally, we used poly(3-hexylthiophene)-based organic thin-film transistors to show that the asymmetric electronic response stems from the different electronic structures of the functionalized electrodes.

| S-EPMC6641596 | biostudies-literature

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors.

Project description:Printing technologies for thin-film transistors (TFTs) have recently attracted much interest owing to their eco-friendliness, direct patterning, low cost, and roll-to-roll manufacturing processes. Lower production costs could result if electrodes fabricated by vacuum processes could be replaced by inkjet printing. However, poor interfacial contacts and/or serious diffusion between the active layer and the silver electrodes are still problematic for achieving amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs with good electrical performance. In this paper, silver (Ag) source/drain electrodes were directly inkjet-printed on an amorphous a-IGZO layer to fabricate TFTs that exhibited a mobility of 0.29 cm²·V-1·s-1 and an on/off current ratio of over 10⁵. To the best of our knowledge, this is a major improvement for bottom-gate top-contact a-IGZO TFTs with directly printed silver electrodes on a substrate with no pretreatment. This study presents a promising alternative method of fabricating electrodes of a-IGZO TFTs with desirable device performance.

| S-EPMC5344586 | biostudies-literature

Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors.

Project description:In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO2/p+-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose a switching model based on using a native oxide as the Schottky barrier. The barrier height is extracted by the conduction mechanism of thermionic emission in samples with different annealing temperatures. Additionally, the change in conductance is explained by an energy band diagram including trap models. The activation energy is obtained by the depression curve of the samples with different annealing temperatures to better understand the switching mechanism. Moreover, our results reveal that the annealing temperature and retention can affect the linearity of potentiation and depression. Finally, we investigate the effect of the annealing temperature on the recognition rate of MNIST in the proposed neural network.

| S-EPMC9610976 | biostudies-literature

Intense pulsed light annealing of solution-based indium-gallium-zinc-oxide semiconductors with printed Ag source and drain electrodes for bottom gate thin film transistors.

Project description:In this study, an intense pulsed light (IPL) annealing process for a printed multi-layered indium-gallium-zinc-oxide (IGZO) and silver (Ag) electrode structure was developed for a high performance all-printed inorganic thin film transistor (TFT). Through a solution process using IGZO precursor and Ag ink, the bottom gate structure TFT was fabricated. The spin coating method was used to form the IGZO semiconductor layer on a heavily-doped silicon wafer covered with thermally grown silicon dioxide. The annealing process of the IGZO layer utilized an optimized IPL irradiation process. The Ag inks were printed on the IGZO layer by screen printing to form the source and drain (S/D) pattern. This S/D pattern was dried by near infrared radiation (NIR) and the dried S/D pattern was sintered with intense pulsed light by varying the irradiation energy. The performances of the all-printed TFT such as the field effect mobility and on-off ratio electrical transfer properties were measured by a parameter analyzer. The interfacial analysis including the contact resistance and cross-sectional microstructure analysis is essential because diffusion phenomenon can occur during the annealing and sintering process. Consequently, this TFT device showed noteworthy performance (field effect mobility: 7.96 cm2/V s, on/off ratio: 107). This is similar performance compared to a conventional TFT, which is expected to open a new path in the printed metal oxide-based TFT field.

| S-EPMC10796356 | biostudies-literature

Cu mesh for flexible transparent conductive electrodes.

Project description:Copper electrodes with a micromesh/nanomesh structure were fabricated on a polyimide substrate using UV lithography and wet etching to produce flexible transparent conducting electrodes (TCEs). Well-defined mesh electrodes were realized through the use of high-quality Cu thin films. The films were fabricated using radio-frequency (RF) sputtering with a single-crystal Cu target--a simple but innovative approach that overcame the low oxidation resistance of ordinary Cu. Hybrid Cu mesh electrodes were fabricated by adding a capping layer of either ZnO or Al-doped ZnO. The sheet resistance and the transmittance of the electrode with an Al-doped ZnO capping layer were 6.197 ohm/sq and 90.657%, respectively, and the figure of merit was 60.502 × 10(-3)/ohm, which remained relatively unchanged after thermal annealing at 200 °C and 1,000 cycles of bending. This fabrication technique enables the mass production of large-area flexible TCEs, and the stability and high performance of Cu mesh hybrid electrodes in harsh environments suggests they have strong potential for application in smart displays and solar cells.

| S-EPMC4454070 | biostudies-literature

Fe3O4 nanoparticle-coated mushroom source biomaterial for Cr(VI) polluted liquid treatment and mechanism research.

Project description:Agrocybe cylindracea substrate-Fe3O4 (ACS-Fe3O4), a Fe3O4 nanoparticle-coated biomaterial derived from agriculture waste from mushroom cultivation, was developed to remove hexavalent chromium (Cr(VI)) from liquid. After modification, material surface became uneven with polyporous and crinkly structure which improved Cr-accommodation ability in a sound manner. Optimized by the Taguchi method, Cr(VI) removal percentage was up to 73.88 at 240 min, 40°C, pH 3, Cr(VI) concentration 200 mg l-1, dosage 12 g l-1, rpm 200. The efficient Cr(VI) removal was due to the combined effect of adsorption and redox. In addition, verification test using tannery wastewater, with removal percentage of Cr(VI) and total Cr reaching 98.35 and 95.6, provided further evidence for the efficiency and feasibility of ACS-Fe3O4. The effect of storage time of the material on Cr(VI) removal was small, which enhanced its value in practical application. Results indicated that metal removal was mainly influenced by solution concentration, adsorbent dosage and treatment time. The experimental data obtained were successfully fitted with the Langmuir isotherm model. Thermodynamic study indicated the endothermic nature of the process. The results confirmed that ACS-Fe3O4 as novel material derived from waste, with long-term stability, could be applied for heavy metal removal from wastewater and waste cycling.

| S-EPMC5990751 | biostudies-literature

Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers.

Project description:Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of V(TH) shift, deviation of the SS value, and increase in the on-state current were detected only for the IGZO-TFT, in contrast to the IGO-TFT, which did not demonstrate V(TH) shift. These behaviors were visually confirmed via nanoscale transmission electron microscopy and energy-dispersive x-ray spectroscopy observations. To understand the degradation mechanism, we performed ab initio molecular dynamic simulations on the liquid phases of IGZO and IGO. The diffusivities of Ga and In atoms were enhanced in IGZO, confirming the degradation mechanism to be increased atomic diffusion.

| S-EPMC4298721 | biostudies-other

Work Function Tuning in Two-Dimensional MoS2 Field-Effect-Transistors with Graphene and Titanium Source-Drain Contacts.

Project description:Based on the first principles calculation, we investigate the electronic band structures of graphene-MoS2 and Ti-MoS2 heterojunctions under gate-voltages. By simultaneous control of external electric fields and carrier charging concentrations, we show that the graphene's Dirac point position inside the MoS2 bandgap is easily modulated with respect to the co-varying Fermi level, while keeping the graphene's linear band structure around the Dirac point. The easy modulation of graphene bands is not confined to the special cases where the conduction-band-minimum point of MoS2 and the Dirac point of graphene are matched up in reciprocal space, but is generalized to their dislocated cases. This flexibility caused by the strong decoupling between graphene and MoS2 bands enhances the gate-controlled switching performance in MoS2-graphene hybrid stacking-device.

| S-EPMC5371988 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data