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Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers.

ABSTRACT: Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of V(TH) shift, deviation of the SS value, and increase in the on-state current were detected only for the IGZO-TFT, in contrast to the IGO-TFT, which did not demonstrate V(TH) shift. These behaviors were visually confirmed via nanoscale transmission electron microscopy and energy-dispersive x-ray spectroscopy observations. To understand the degradation mechanism, we performed ab initio molecular dynamic simulations on the liquid phases of IGZO and IGO. The diffusivities of Ga and In atoms were enhanced in IGZO, confirming the degradation mechanism to be increased atomic diffusion.

SUBMITTER: Bak JY

PROVIDER: S-EPMC4298721 | biostudies-other | 2015

REPOSITORIES: biostudies-other

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Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers.

Bak Jun Yong JY Kang Youngho Y Yang Shinhyuk S Ryu Ho-Jun HJ Hwang Chi-Sun CS Han Seungwu S Yoon Sung-Min SM

Scientific reports 20150120

Top-gate structured thin film transistors (TFTs) using In-Ga-Zn-O (IGZO) and In-Ga-O (IGO) channel compositions were investigated to reveal a feasible origin for degradation phenomenon under drain bias stress (DBS). DBS-driven instability in terms of V(TH) shift, deviation of the SS value, and increase in the on-state current were detected only for the IGZO-TFT, in contrast to the IGO-TFT, which did not demonstrate V(TH) shift. These behaviors were visually confirmed via nanoscale transmission e ...[more]

PMID: 25601183

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