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Influence of Discharge Current on Phase Transition Properties of High Quality Polycrystalline VO₂ Thin Film Fabricated by HiPIMS.

ABSTRACT: To fabricate high-quality polycrystalline VO₂ thin film with a metal-insulator transition (MIT) temperature less than 50 °C, high-power impulse magnetron sputtering with different discharge currents was employed in this study. The as-deposited VO₂ films were characterized by a four-point probe resistivity measurement system, visible-near infrared (IR) transmittance spectra, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy. The resistivity results revealed that all the as-deposited films had a high resistance change in the phase transition process, and the MIT temperature decreased with the increased discharge current, where little deterioration in the phase transition properties, such as the resistance and transmittance changes, could be found. Additionally, XRD patterns at various temperatures exhibited that some reverse deformations that existed in the MIT process of the VO₂ film, with a large amount of preferred crystalline orientations. The decrease of the MIT temperature with little deterioration on phase transition properties could be attributed to the reduction of the preferred grain orientations.

SUBMITTER: Lin T

PROVIDER: S-EPMC5554014 | biostudies-other | 2017 Jun

REPOSITORIES: biostudies-other

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Project description:Over the years, vanadium dioxide, (VO2(M1)), has been extensively utilised to fabricate thermochromic thin films with the focus on using external stimuli, such as heat, to modulate the visible through near-infrared transmittance for energy efficiency of buildings and indoor comfort. It is thus valuable to extend the study of thermochromic materials into the mid-infrared (MIR) wavelengths for applications such as smart radiative devices. On top of this, there are numerous challenges with synthesising pure VO2 (M1) thin films, as most fabrication techniques require the post-annealing of a deposited thin film to convert amorphous VO2 into a crystalline phase. Here, we present a direct method to fabricate thicker VO2(M1) thin films onto hot silica substrates (at substrate temperatures of 400 °C and 700 °C) from vanadium pentoxide (V2O5) precursor material. A high repetition rate (10 kHz) femtosecond laser is used to deposit the V2O5 leading to the formation of VO2 (M1) without any post-annealing steps. Surface morphology, structural properties, and UV-visible optical properties, including optical band gap and complex refractive index, as a function of the substrate temperature, were studied and reported below. The transmission electron microscopic (TEM) and X-ray diffraction studies confirm that VO2 (M1) thin films deposited at 700 °C are dominated by a highly texturized polycrystalline monoclinic crystalline structure. The thermochromic characteristics in the mid-infrared (MIR) at a wavelength range of 2.5-5.0 μm are presented using temperature-dependent transmittance measurements. The first-order phase transition from metal-to-semiconductor and the hysteresis bandwidth of the transition were confirmed to be 64.4 °C and 12.6 °C respectively, for a sample fabricated at 700 °C. Thermo-optical emissivity properties indicate that these VO2 (M1) thin films fabricated with femtosecond laser deposition have strong potential for both radiative thermal management or control via active energy-saving windows for buildings, and satellites and spacecraft.

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Influence of Discharge Current on Phase Transition Properties of High Quality Polycrystalline VO₂ Thin Film Fabricated by HiPIMS.

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