Understanding contact gating in Schottky barrier transistors from 2D channels.

ABSTRACT: In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the "conventional" model for SB-FETs with the phenomenon of contact gating - an effect that significantly affects the carrier injection from the source electrode in back-gated field effect transistors. The two-path model is validated by a careful comparison with experimental characteristics obtained from a large number of back-gated WSe2 devices with various channel thicknesses. Our findings are believed to be of critical importance for the quantitative analysis of many three-terminal devices with ultrathin body channels.

SUBMITTER: Prakash A 

PROVIDER: S-EPMC5626721 | biostudies-other | 2017 Oct

REPOSITORIES: biostudies-other