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CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology.

ABSTRACT: This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good ION/IOFF (10³) ratio, abrupt subthreshold swing (4.3 mV/decade) and minimum dimensions (3.50 ?m × 100 nm × 180 nm, and gap of 100 nm). With these dimensions, the operable Cell area of the switch will be 3.5 ?m (length) × 0.2 ?m (100 nm width + 100 nm gap) = 0.7 ?m² which is the smallest reported one using a top-down fabrication approach.

SUBMITTER: Munoz-Gamarra JL

PROVIDER: S-EPMC6190103 | biostudies-other | 2016 Feb

REPOSITORIES: biostudies-other

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CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology.

Muñoz-Gamarra Jose Luis JL Uranga Arantxa A Barniol Nuria N

Micromachines 20160215 2

This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good ION/IOFF (10³) ratio, abrupt subthreshold swing (4.3 mV/decade) and minimum dimensions (3.50 μm × 100 nm × 180 nm, ...[more]

PMID: 30407403

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