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Composition change-driven texturing and doping in solution-processed SnSe thermoelectric thin films.


ABSTRACT: The discovery of SnSe single crystals with record high thermoelectric efficiency along the b-axis has led to the search for ways to synthesize polycrystalline SnSe with similar efficiencies. However, due to weak texturing and difficulties in doping, such high thermoelectric efficiencies have not been realized in polycrystals or thin films. Here, we show that highly textured and hole doped SnSe thin films with thermoelectric power factors at the single crystal level can be prepared by solution process. Purification step in the synthetic process produced a SnSe-based chalcogenidometallate precursor, which decomposes to form the SnSe2 phase. We show that the strong textures of the thin films in the b-c plane originate from the transition of two dimensional SnSe2 to SnSe. This composition change-driven transition offers wide control over composition and doping of the thin films. Our optimum SnSe thin films exhibit a thermoelectric power factor of 4.27 μW cm-1 K-2.

SUBMITTER: Heo SH 

PROVIDER: S-EPMC6382880 | biostudies-other | 2019 Feb

REPOSITORIES: biostudies-other

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Composition change-driven texturing and doping in solution-processed SnSe thermoelectric thin films.

Heo Seung Hwae SH   Jo Seungki S   Kim Hyo Seok HS   Choi Garam G   Song Jae Yong JY   Kang Jun-Yun JY   Park No-Jin NJ   Ban Hyeong Woo HW   Kim Fredrick F   Jeong Hyewon H   Jung Jaemin J   Jang Jaeyoung J   Lee Won Bo WB   Shin Hosun H   Son Jae Sung JS  

Nature communications 20190220 1


The discovery of SnSe single crystals with record high thermoelectric efficiency along the b-axis has led to the search for ways to synthesize polycrystalline SnSe with similar efficiencies. However, due to weak texturing and difficulties in doping, such high thermoelectric efficiencies have not been realized in polycrystals or thin films. Here, we show that highly textured and hole doped SnSe thin films with thermoelectric power factors at the single crystal level can be prepared by solution pr  ...[more]

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