Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Atomic-scale mapping of hydrophobic layers on graphene and few-layer MoS2 and WSe2 in water.

ABSTRACT: The structure and the role of the interfacial water in mediating the interactions of extended hydrophobic surfaces are not well understood. Two-dimensional materials provide a variety of large and atomically flat hydrophobic surfaces to facilitate our understanding of hydrophobic interactions. The angstrom resolution capabilities of three-dimensional AFM are exploited to image the interfacial water organization on graphene, few-layer MoS2 and few-layer WSe2. Those interfaces are characterized by the existence of a 2 nm thick region above the solid surface where the liquid density oscillates. The distances between adjacent layers for graphene, few-layer MoS2 and WSe2 are ~0.50 nm. This value is larger than the one predicted and measured for water density oscillations (~0.30 nm). The experiments indicate that on extended hydrophobic surfaces water molecules are expelled from the vicinity of the surface and replaced by several molecular-size hydrophobic layers.

SUBMITTER: Uhlig MR

PROVIDER: S-EPMC6565678 | biostudies-other | 2019 Jun

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Publications

Atomic-scale mapping of hydrophobic layers on graphene and few-layer MoS2 and WSe2 in water.

Uhlig Manuel R MR Martin-Jimenez Daniel D Garcia Ricardo R

Nature communications 20190613 1

The structure and the role of the interfacial water in mediating the interactions of extended hydrophobic surfaces are not well understood. Two-dimensional materials provide a variety of large and atomically flat hydrophobic surfaces to facilitate our understanding of hydrophobic interactions. The angstrom resolution capabilities of three-dimensional AFM are exploited to image the interfacial water organization on graphene, few-layer MoS2 and few-layer WSe2. Those interface ...[more]

PMID: 31197159

Similar Datasets

Interfacial Atomic Structure of Twisted Few-Layer Graphene.

Project description:A twist in bi- or few-layer graphene breaks the local symmetry, introducing a number of intriguing physical properties such as opening new bandgaps. Therefore, determining the twisted atomic structure is critical to understanding and controlling the functional properties of graphene. Combining low-angle annular dark-field electron microscopy with image simulations, we directly determine the atomic structure of twisted few-layer graphene in terms of a moiré superstructure which is parameterized by a single twist angle and lattice constant. This method is shown to be a powerful tool for accurately determining the atomic structure of two-dimensional materials such as graphene, even in the presence of experimental errors. Using coincidence-site-lattice and displacement-shift-complete theories, we show that the in-plane translation state between layers is not a significant structure parameter, explaining why the present method is adequate not only for bilayer graphene but also a few-layered twisted graphene.

| S-EPMC4758067 | biostudies-literature

Direct Transformation of Crystalline MoO3 into Few-Layers MoS2.

Project description:We fabricated large-area atomically thin MoS2 layers through the direct transformation of crystalline molybdenum trioxide (MoO3) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10-20 nm single-crystal domain size) with areas of up to 300 × 300 µm2, 2-4 layers in thickness and show a marked p-type behavior. The synthesized films are characterized by a combination of complementary techniques: Raman spectroscopy, X-ray diffraction, transmission electron microscopy and electronic transport measurements.

| S-EPMC7287652 | biostudies-literature

Determination of band alignment in the single-layer MoS2/WSe2 heterojunction.

Project description:The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.

| S-EPMC4518320 | biostudies-literature

Atomic-layer soft plasma etching of MoS2.

Project description:Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4?eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications.

| S-EPMC4728689 | biostudies-literature

Large area growth and electrical properties of p-type WSe2 atomic layers.

Project description:Transition metal dichacogenides represent a unique class of two-dimensional layered materials that can be exfoliated into single or few atomic layers. Tungsten diselenide (WSe(2)) is one typical example with p-type semiconductor characteristics. Bulk WSe(2) has an indirect band gap (∼ 1.2 eV), which transits into a direct band gap (∼ 1.65 eV) in monolayers. Monolayer WSe(2), therefore, is of considerable interest as a new electronic material for functional electronics and optoelectronics. However, the controllable synthesis of large-area WSe(2) atomic layers remains a challenge. The studies on WSe(2) are largely limited by relatively small lateral size of exfoliated flakes and poor yield, which has significantly restricted the large-scale applications of the WSe(2) atomic layers. Here, we report a systematic study of chemical vapor deposition approach for large area growth of atomically thin WSe(2) film with the lateral dimensions up to ∼ 1 cm(2). Microphotoluminescence mapping indicates distinct layer dependent efficiency. The monolayer area exhibits much stronger light emission than bilayer or multilayers, consistent with the expected transition to direct band gap in the monolayer limit. The transmission electron microscopy studies demonstrate excellent crystalline quality of the atomically thin WSe(2). Electrical transport studies further show that the p-type WSe(2) field-effect transistors exhibit excellent electronic characteristics with effective hole carrier mobility up to 100 cm(2) V(-1) s(-1) for monolayer and up to 350 cm(2) V(-1) s(-1) for few-layer materials at room temperature, comparable or well above that of previously reported mobility values for the synthetic WSe(2) and comparable to the best exfoliated materials.

| S-EPMC4296926 | biostudies-literature

Lift-Off Assisted Patterning of Few Layers Graphene.

Project description:Graphene and 2D materials have been exploited in a growing number of applications and the quality of the deposited layer has been found to be a critical issue for the functionality of the developed devices. Particularly, Chemical Vapor Deposition (CVD) of high quality graphene should be preserved without defects also in the subsequent processes of transferring and patterning. In this work, a lift-off assisted patterning process of Few Layer Graphene (FLG) has been developed to obtain a significant simplification of the whole transferring method and a conformal growth on micrometre size features. The process is based on the lift-off of the catalyst seed layer prior to the FLG deposition. Starting from a SiO2 finished Silicon substrate, a photolithographic step has been carried out to define the micro patterns, then an evaporation of Pt thin film on Al2O3 adhesion layer has been performed. Subsequently, the Pt/Al2O3 lift-off step has been attained using a dimethyl sulfoxide (DMSO) bath. The FLG was grown directly on the patterned Pt seed layer by Chemical Vapor Deposition (CVD). Raman spectroscopy was applied on the patterned area in order to investigate the quality of the obtained graphene. Following the novel lift-off assisted patterning technique a minimization of the de-wetting phenomenon for temperatures up to 1000 °C was achieved and micropatterns, down to 10 µm, were easily covered with a high quality FLG.

| S-EPMC6631601 | biostudies-literature

Atomic Layer Deposition of Titanium Oxide on Single-Layer Graphene: An Atomic-Scale Study toward Understanding Nucleation and Growth.

Project description:Controlled synthesis of a hybrid nanomaterial based on titanium oxide and single-layer graphene (SLG) using atomic layer deposition (ALD) is reported here. The morphology and crystallinity of the oxide layer on SLG can be tuned mainly with the deposition temperature, achieving either a uniform amorphous layer at 60 °C or ∼2 nm individual nanocrystals on the SLG at 200 °C after only 20 ALD cycles. A continuous and uniform amorphous layer formed on the SLG after 180 cycles at 60 °C can be converted to a polycrystalline layer containing domains of anatase TiO2 after a postdeposition annealing at 400 °C under vacuum. Using aberration-corrected transmission electron microscopy (AC-TEM), characterization of the structure and chemistry was performed on an atomic scale and provided insight into understanding the nucleation and growth. AC-TEM imaging and electron energy loss spectroscopy revealed that rocksalt TiO nanocrystals were occasionally formed at the early stage of nucleation after only 20 ALD cycles. Understanding and controlling nucleation and growth of the hybrid nanomaterial are crucial to achieving novel properties and enhanced performance for a wide range of applications that exploit the synergetic functionalities of the ensemble.

| S-EPMC5364723 | biostudies-literature

Charge-transfer-based gas sensing using atomic-layer MoS2.

Project description:Two-dimensional (2D) molybdenum disulphide (MoS2) atomic layers have a strong potential to be used as 2D electronic sensor components. However, intrinsic synthesis challenges have made this task difficult. In addition, the detection mechanisms for gas molecules are not fully understood. Here, we report a high-performance gas sensor constructed using atomic-layered MoS2 synthesised by chemical vapour deposition (CVD). A highly sensitive and selective gas sensor based on the CVD-synthesised MoS2 was developed. In situ photoluminescence characterisation revealed the charge transfer mechanism between the gas molecules and MoS2, which was validated by theoretical calculations. First-principles density functional theory calculations indicated that NO2 and NH3 molecules have negative adsorption energies (i.e., the adsorption processes are exothermic). Thus, NO2 and NH3 molecules are likely to adsorb onto the surface of the MoS2. The in situ PL characterisation of the changes in the peaks corresponding to charged trions and neutral excitons via gas adsorption processes was used to elucidate the mechanisms of charge transfer between the MoS2 and the gas molecules.

| S-EPMC4307013 | biostudies-literature

Layer-by-Layer Insight into Electrostatic Charge Distribution of Few-Layer Graphene.

Project description:In few-layer graphene (FLG) systems on a dielectric substrate such as SiO2, the addition of each extra layer of graphene can drastically alter their electronic and structural properties. Here, we map the charge distribution among the individual layers of finite-size FLG systems using a novel spatial discrete model that describes both electrostatic interlayer screening and fringe field effects. Our results reveal that the charge density in the region very close to the edges is screened out an order of magnitude more weakly than that across the central region of the layers. Our discrete model suggests that the interlayer charge screening length in 1-8 layer thick graphene systems depends mostly on the overall gate/molecular doping level rather than on temperature, in particular at an induced charge density >5 × 1012 cm-2, and can reliably be determined to be larger than half the interlayer spacing but shorter than the bilayer thickness. Our model can be used for designing FLG-based devices, and offers a simple rule regarding the charge distribution in FLG: approximately 70%, 20%, 6% and 3% (99% overall) of the total induced charge density reside within the four innermost layers, implying that the gate-induced electric field is not definitely felt by >4th layer.

| S-EPMC5318858 | biostudies-literature

Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure.

Project description:Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm(2)) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials.

| S-EPMC4857110 | biostudies-other