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Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition.


ABSTRACT: This study systematically investigates the influence of antimony (Sb) species on the electrical properties of Sb-doped zinc oxide (SZO) thin films prepared by pulsed laser deposition in an oxygen-rich environment. The Sb species-related defects were controlled through a qualitative change in energy per atom by increasing the Sb content in the Sb2O3:ZnO-ablating target. By increasing the content of Sb2O3 (wt.%) in the target, Sb3+ became the dominant Sb ablation species in the plasma plume. Consequently, n-type conductivity was converted to p-type conductivity in the SZO thin films prepared using the ablating target containing 2 wt.% Sb2O3. The substituted Sb species in the Zn site (SbZn3+ and SbZn+) were responsible for forming n-type conductivity at low-level Sb doping. On the other hand, the Sb-Zn complex defects (SbZn-2VZn) contributed to the formation of p-type conductivity at high-level doping. The increase in Sb2O3 content in the ablating target, leading to a qualitative change in energy per Sb ion, offers a new pathway to achieve high-performing optoelectronics using ZnO-based p-n junctions.

SUBMITTER: Jessadaluk S 

PROVIDER: S-EPMC10255333 | biostudies-literature | 2023 Jun

REPOSITORIES: biostudies-literature

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Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition.

Jessadaluk Sukittaya S   Khemasiri Narathon N   Kayunkid Navaphun N   Rangkasikorn Adirek A   Wirunchit Supamas S   Tammarugwattana Narin N   Mano Kitipong K   Chananonnawathorn Chanunthorn C   Horprathum Mati M   Klamchuen Annop A   Rahong Sakon S   Nukeaw Jiti J  

Nanomaterials (Basel, Switzerland) 20230604 11


This study systematically investigates the influence of antimony (Sb) species on the electrical properties of Sb-doped zinc oxide (SZO) thin films prepared by pulsed laser deposition in an oxygen-rich environment. The Sb species-related defects were controlled through a qualitative change in energy per atom by increasing the Sb content in the Sb<sub>2</sub>O<sub>3</sub>:ZnO-ablating target. By increasing the content of Sb<sub>2</sub>O<sub>3</sub> (wt.%) in the target, Sb<sup>3+</sup> became the  ...[more]

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