Ontology highlight
ABSTRACT:
SUBMITTER: Lv Y
PROVIDER: S-EPMC3477020 | biostudies-literature | 2012 Aug
REPOSITORIES: biostudies-literature
Lv Yuanjie Y Lin Zhaojun Z Meng Lingguo L Luan Chongbiao C Cao Zhifang Z Yu Yingxia Y Feng Zhihong Z Wang Zhanguo Z
Nanoscale research letters 20120803 1
Using measured capacitance-voltage curves with different gate lengths and current-voltage characteristics at low drain-to-source voltage for the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) of different drain-to-source distances, we found that the dominant scattering mechanism in AlGaN/AlN/GaN HFETs is determined by the ratio of gate length to drain-to-source distance. For devices with small ratio (here, less than 1/2), polarization Coulomb field scattering dominates electron m ...[more]