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Origins of the Schottky Barrier to a 2DHG in a Au/Ni/GaN/AlGaN/GaN Heterostructure.

ABSTRACT: We report the influence of thickness of an undoped GaN (u-GaN) layer on current transport to a 2DHG through the metal/p++GaN contact in a GaN/AlGaN/GaN heterostructure. The current is dominated by an internal potential barrier of 0.2-0.27 eV at the p+ GaN/u-GaN, which increases with thickness from 5 to 15 nm and remains constant thereafter due to Fermi pinning by a defect at ∼0.6 eV from the top valence band. We also report a nonideality factor, n, between 6 and 12, for the combined tunneling current through the p+GaN/u-GaN to the 2DHG. Our contact resistivity of 5.3 × 10^-4 Ω cm² and hole mobility, μ, of ∼15.65 cm²/V s are the best-in-class for this metal stack on a GaN/AlGaN/GaN heterostructure, reported to date.

SUBMITTER: Do HB

PROVIDER: S-EPMC9609307 | biostudies-literature | 2022 Oct

REPOSITORIES: biostudies-literature

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Origins of the Schottky Barrier to a 2DHG in a Au/Ni/GaN/AlGaN/GaN Heterostructure.

Do Huy-Binh HB Zhou Jinggui J De Souza Maria Merlyne MM

ACS applied electronic materials 20220921 10

We report the influence of thickness of an undoped GaN (u-GaN) layer on current transport to a 2DHG through the metal/p++GaN contact in a GaN/AlGaN/GaN heterostructure. The current is dominated by an internal potential barrier of 0.2-0.27 eV at the p+ GaN/u-GaN, which increases with thickness from 5 to 15 nm and remains constant thereafter due to Fermi pinning by a defect at ∼0.6 eV from the top valence band. We also report a nonideality factor, <i>n</i>, between 6 and 12, for the combined tunne ...[more]

PMID: 36311441

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