Ontology highlight
ABSTRACT:
SUBMITTER: Ha R
PROVIDER: S-EPMC3720202 | biostudies-literature | 2013 Jun
REPOSITORIES: biostudies-literature
Ha Ryong R Kim Sung-Wook SW Choi Heon-Jin HJ
Nanoscale research letters 20130626 1
We have fabricated the vertically aligned coaxial or longitudinal heterostructure GaN/InGaN nanowires. The GaN nanowires are first vertically grown by vapor-liquid-solid mechanism using Au/Ni bi-metal catalysts. The GaN nanowires are single crystal grown in the [0001] direction, with a length and diameter of 1 to 10 μm and 100 nm, respectively. The vertical GaN/InGaN coaxial heterostructure nanowires (COHN) are then fabricated by the subsequent deposition of 2 nm of InxGa1-xN shell on the surfac ...[more]