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Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method.

ABSTRACT: A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2?V to 7?V. In the reliability test, the device exhibited a good endurance of over 10(5) cycles and a long data retention of over 10(5)?s at 85°C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.

SUBMITTER: Kim HD

PROVIDER: S-EPMC3980222 | biostudies-literature | 2014

REPOSITORIES: biostudies-literature

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Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method.

Kim Hee-Dong HD Yun Min Ju MJ Lee Jae Hoon JH Kim Kyoeng Heon KH Kim Tae Geun TG

Scientific reports 20140409

A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2 V to 7 V. In the reliability test, the device exhibited a good endurance of over 10(5) cycles and a long da ...[more]

PMID: 24714566

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