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Time-resolved observation of band-gap shrinking and electron-lattice thermalization within X-ray excited gallium arsenide.

ABSTRACT: Femtosecond X-ray irradiation of solids excites energetic photoelectrons that thermalize on a timescale of a few hundred femtoseconds. The thermalized electrons exchange energy with the lattice and heat it up. Experiments with X-ray free-electron lasers have unveiled so far the details of the electronic thermalization. In this work we show that the data on transient optical reflectivity measured in GaAs irradiated with femtosecond X-ray pulses can be used to follow electron-lattice relaxation up to a few tens of picoseconds. With a dedicated theoretical framework, we explain the so far unexplained reflectivity overshooting as a result of band-gap shrinking. We also obtain predictions for a timescale of electron-lattice thermalization, initiated by conduction band electrons in the temperature regime of a few eVs. The conduction and valence band carriers were then strongly non-isothermal. The presented scheme is of general applicability and can stimulate further studies of relaxation within X-ray excited narrow band-gap semiconductors.

SUBMITTER: Ziaja B

PROVIDER: S-EPMC4676029 | biostudies-literature | 2015 Dec

REPOSITORIES: biostudies-literature

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Time-resolved observation of band-gap shrinking and electron-lattice thermalization within X-ray excited gallium arsenide.

Ziaja Beata B Medvedev Nikita N Tkachenko Victor V Maltezopoulos Theophilos T Wurth Wilfried W

Scientific reports 20151211

Femtosecond X-ray irradiation of solids excites energetic photoelectrons that thermalize on a timescale of a few hundred femtoseconds. The thermalized electrons exchange energy with the lattice and heat it up. Experiments with X-ray free-electron lasers have unveiled so far the details of the electronic thermalization. In this work we show that the data on transient optical reflectivity measured in GaAs irradiated with femtosecond X-ray pulses can be used to follow electron-lattice relaxation up ...[more]

PMID: 26655671

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Project description:This work for the first time unfurls the fundamental mechanisms and sets the stage for an approach to derive electrocatalytic activity, which is otherwise not possible, in a traditionally known wide band-gap oxide material. Specifically, we report on the tunable optical properties, in terms of wide spectral selectivity and red-shifted band gap, and electrocatalytic behavior of iron (Fe)-doped gallium oxide (?-Ga2O3) model system. X-ray diffraction (XRD) studies of sintered Ga2-x Fe x O3 (GFO) (0.0 ? x ? 0.3) compounds provide evidence for the Fe3+ substitution at Ga3+ site without any secondary phase formation. Rietveld refinement of XRD patterns reveals that the GFO compounds crystallize in monoclinic crystal symmetry with a C2/m space group. The electronic structure of the GFO compounds probed using X-ray photoelectron spectroscopy data reveals that at lower concentrations, Fe exhibits mixed chemical valence states (Fe3+, Fe2+), whereas single chemical valence state (Fe3+) is evident for higher Fe content (x = 0.20-0.30). The optical absorption spectra reveal a significant red shift in the optical band gap with Fe doping. The origin of the significant red shift even at low concentrations of Fe (x = 0.05) is attributed to the strong sp-d exchange interaction originated from the 3d5 electrons of Fe3+. The optical absorption edge observed at ?450 nm with lower intensity is the characteristic of Fe-doped compounds associated with Fe3+-Fe3+ double-excitation process. Coupled with an optical band-gap red shift, electrocatalytic studies of GFO compounds reveal that, interestingly, Fe-doped Ga2O3 compound exhibits electrocatalytic activity in contrast to intrinsic Ga2O3. Fe-doped samples (GFO) demonstrated appreciable electrocatalytic activity toward the generation of H2 through electrocatalytic water splitting. An onset potential and Tafel slope of GFO compounds include ?900 mV, ?210 mV dec-1 (x = 0.15) and ?1036 mV, ?290 mV dec-1 (x = 0.30), respectively. The electrocatalytic activity of Fe-doped Ga-oxide compounds is attributed to the cumulative effect of different mechanisms such as doping resulting in new catalytic centers, enhanced conductivity, and electron mobility. Hence, in this report, for the first time, we explored a new pathway; the electrocatalytic behavior of Fe-doped Ga2O3 resulted due to Fe chemical states and red shift in the optical band gap. The implications derived from this work may be applicable to a large class of compounds, and further options may be available to design functional materials for electrocatalytic energy production.

Dataset Information

Time-resolved observation of band-gap shrinking and electron-lattice thermalization within X-ray excited gallium arsenide.

Publications

Time-resolved observation of band-gap shrinking and electron-lattice thermalization within X-ray excited gallium arsenide.

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