Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications.

ABSTRACT: Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called "Si photonics"). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we repo

SUBMITTER: Geum DM 

PROVIDER: S-EPMC4750074 | biostudies-literature | 2016 Feb

REPOSITORIES: biostudies-literature