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Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO3 Thin Films with High Dielectric Response.

ABSTRACT: BiFeO3 is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (?' ?2500) and low dielectric loss (tan ??

SUBMITTER: Scarisoreanu ND

PROVIDER: S-EPMC4860595 | biostudies-literature | 2016 May

REPOSITORIES: biostudies-literature

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Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO3 Thin Films with High Dielectric Response.

Scarisoreanu N D ND Craciun F F Birjega R R Ion V V Teodorescu V S VS Ghica C C Negrea R R Dinescu M M

Scientific reports 20160509

BiFeO3 is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε' ∼2500) and low dielectric loss (tan δ < 0.01) obtained on Bi0.95Y0.05FeO3 films epitaxially grown on SrTiO3 (001) by pulsed laser deposition. High resolution transmission electron microscopy and geometric phase analysis evidenced nanostripe domains with alternating compressive/tensile strain ...[more]

PMID: 27157090

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