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Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness.


ABSTRACT: In this paper, a simple and controllable "wet pulse annealing" technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics revealed a remarkable performance of the a-IGZO TFTs prepared at the maximum process temperature of 150 °C (field-effect mobility of 13.3 cm(2) V(-1) s(-1); Ion/Ioff ratio ≈ 10(8); reduced I-V hysteresis), comparable to that of a-IGZO TFTs annealed at 350 °C in dry ambient. Upon analysis of the angle-resolved x-ray photoelectron spectroscopy, the good performance was attributed to the effective suppression of the formation of hydroxide and oxygen-related defects. Finally, by using the wet pulse annealing process, we fabricated, on a plastic substrate, an ultrathin flexible a-IGZO TFT with good electrical and bending performances.

SUBMITTER: Kim YK 

PROVIDER: S-EPMC4873798 | biostudies-literature | 2016 May

REPOSITORIES: biostudies-literature

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Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness.

Kim Ye Kyun YK   Ahn Cheol Hyoun CH   Yun Myeong Gu MG   Cho Sung Woon SW   Kang Won Jun WJ   Cho Hyung Koun HK  

Scientific reports 20160520


In this paper, a simple and controllable "wet pulse annealing" technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics reveal  ...[more]

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