Unknown

Dataset Information

0

Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.


ABSTRACT: We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(-1) s(-1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.

SUBMITTER: Itoh T 

PROVIDER: S-EPMC4935987 | biostudies-literature |

REPOSITORIES: biostudies-literature

Similar Datasets

| S-EPMC5451404 | biostudies-literature
| S-EPMC5503179 | biostudies-literature
| S-EPMC4066259 | biostudies-other
| S-EPMC3840378 | biostudies-other
| S-EPMC4215323 | biostudies-other
| S-EPMC9054304 | biostudies-literature
| S-EPMC9086866 | biostudies-literature
| S-EPMC4403349 | biostudies-literature
| S-EPMC5766328 | biostudies-other
| S-EPMC3493649 | biostudies-literature