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Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.

ABSTRACT: We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(-1) s(-1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.

SUBMITTER: Itoh T

PROVIDER: S-EPMC4935987 | biostudies-literature | 2016 Jul

REPOSITORIES: biostudies-literature

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Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.

Itoh Takeki T Kobayashi Atsushi A Ueno Kohei K Ohta Jitsuo J Fujioka Hiroshi H

Scientific reports 20160707

We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm ...[more]

PMID: 27383148

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