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Novel Self-shrinking Mask for Sub-3?nm Pattern Fabrication.


ABSTRACT: It is very difficult to realize sub-3?nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic, and computing devices. Here we propose a completely original and novel concept, termed self-shrinking dielectric mask (SDM), to fabricate sub-3?nm patterns. Instead of focusing the electron and ion beams or light to an extreme scale, the SDM method relies on a hard dielectric mask which shrinks the critical dimension of nanopatterns during the ion irradiation. Based on the SDM method, a linewidth as low as 2.1?nm was achieved along with a high aspect ratio in the sub-10?nm scale. In addition, numerous patterns with assorted shapes can be fabricated simultaneously using the SDM technique, exhibiting a much higher throughput than conventional ion beam lithography. Therefore, the SDM method can be widely applied in the fields which need extreme nanoscale fabrication.

SUBMITTER: Yang PS 

PROVIDER: S-EPMC4940743 | biostudies-literature | 2016 Jul

REPOSITORIES: biostudies-literature

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Novel Self-shrinking Mask for Sub-3 nm Pattern Fabrication.

Yang Po-Shuan PS   Cheng Po-Hsien PH   Kao C Robert CR   Chen Miin-Jang MJ  

Scientific reports 20160712


It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic, and computing devices. Here we propose a completely original and novel concept, termed self-shrinking dielectric mask (SDM), to fabricate sub-3 nm patterns. Instead of focusing the electron and ion beams or light to an extreme scale, the SDM method relies on a hard dielectric mask which shrinks the critical dimension of nanopatterns during the ion irradiati  ...[more]

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