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Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric.

ABSTRACT: Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a critical partial pressure of the borazine precursor, whereas a thick h-BN layer (thicker than a critical thickness of 10?nm) was grown beyond a critical partial pressure. An interesting coincidence of a critical thickness of 10?nm was identified in both the CVD growth behavior and in the breakdown electric field strength and leakage current mechanism, indicating that the electrical properties of the CVD h-BN film depended significantly on the film growth mode and the resultant film quality.

SUBMITTER: Jang SK

PROVIDER: S-EPMC4960585 | biostudies-literature | 2016 Jul

REPOSITORIES: biostudies-literature

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Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric.

Jang Sung Kyu SK Youn Jiyoun J Song Young Jae YJ Lee Sungjoo S

Scientific reports 20160726

Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a critical partial pressure of the borazine precursor, whereas a thick h-BN layer (thicker than a critical thickness of 10 nm) was grown beyond a critical partial pressure. An interesting coincidence of a cr ...[more]

PMID: 27458024

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